The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures

Pakma, Osman; Serin, N.; Seri̇n, Tülay; Altındal, Ş.

doi:10.1063/1.2952028

Cited by 97 publications

(42 citation statements)

References 40 publications

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“…Such a large discrepancy between the experimental and theoretical values of Richardson constant could be attributed to the potential fluctuations at the Schottky interface caused by the presence of low and high barrier patches [21,22]. In addition, structural defects, wrinkles of the graphene and fabrication process induced contaminations could be a main cause of Schottky barrier inhomogeneity [23][24][25][26].…”

Section: Resultsmentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Khurelbaatar¹,

Kil²,

Shim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.

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Section: Resultsmentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Khurelbaatar¹,

Kil²,

Shim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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“…are not available. Therefore, in typical cases, where the experimental current-voltage characteristics follow the approximately similar behavior as that of Schottky contacts, it is customary to model the device using thermionic emission theory which is dedicated to Schottky contact junctions [20,21].…”

Section: Estimation Of Electrical and Photodetection Performancementioning

confidence: 99%

“…In view of a high barrier height under reverse bias, EHPs generated away from junction cannot cross the junction and as a result they are not able to contribute to the photocurrent in external circuit. However, under forward bias condition the barrier height is lowered by 0.7 eV, due to which the EHPs generated in the ZnO layer contribute to the photocurrent in external circuit [19][20][21]. The optical parameters including responsivity (R) and external photodetection efficiency (g ext ) are calculated using the following expressions [13]:…”

Section: Estimation Of Electrical and Photodetection Performancementioning

confidence: 99%

Fabrication and experimental characterization of a sol–gel derived nanostructured n-ZnO/p-Si heterojunction diode

Singh

Hazra

Tripathi

et al. 2015

J Mater Sci: Mater Electron

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In this paper, fabrication and characterization of a sol-gel derived n-ZnO nanoparticle/p-Si heterojunction diode has been presented. A strong diffraction peak (002) obtained from XRD spectra of sol-gel derived ZnO thin film indicates that the growth of hexagonal wurtzite ZnO nanoparticles are preferably along the c-axis. The surface morphological features extracted from AFM and SEM images predict the uniform growth of ZnO nanoparticles over the p-Si substrate. The optical properties of ZnO nanoparticles have been measured in the spectral range of 300-1000 nm using ellipsometer and photoluminescence spectroscopy. The optical transmittance of ZnO nanoparticles has been observed between 81 and 92.66 % in visible region and the optical band gap has been found out to be 3.24 eV. Finally, metallic contacts were deposited on top of ZnO layer and bottom of Si layer to perform electrical characterization of nanostructured n-ZnO/p-Si heterojunction diodes. Electrical parameters including reverse saturation current, ideality factor, barrier height, rectification ratio have been calculated to explore the potential of the device for futuristic nanoelectronic and optoelectronic device applications.

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“…A similar behavior with a double GD has been observed in the Au/SiO 2 /n-GaN MIS structure 15 and Al/TiO 2 /p-Si MIS structure. 41 Taking into account the barrier inhomogeneity, a modified Richardson plot can be obtained by combining Eqs. 2 and 10 to yield the following expression: Figure 6 shows such a modified ln(I o /T 2 ) À q 2 r o 2 / 2k 2 T 2 versus 1000/T plot.…”

Section: Barrier Inhomogeneitiesmentioning

confidence: 99%

Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN MIS Structure

Reddy

Manjunath

Janardhanam

et al. 2014

Journal of Elec Materi

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The electrical properties of Au/Bi 0.5 Na 0.5 TiO 3 (BNT)-BaTiO 3 (BT)/n-GaN metal-insulator-semiconductor (MIS) structures have been investigated in the temperature range from 120 K to 420 K by current-voltage and capacitance-voltage methods. The Au/BNT-BT/n-GaN MIS structures demonstrate nonideal behaviors indicating the presence of a nonuniform distribution of interface states. Experimental results revealed that the barrier height (U bo ), ideality factor (n), and interface state density (N ss ) of the Au/BNT-BT/n-GaN MIS structures are strongly temperature dependent. It is found that N ss decreases with an increase in temperature. Further, it is observed that U bo increases and n decreases with increasing temperature, which is attributed to barrier inhomogeneities by assuming a Gaussian distribution (GD) of barrier heights (BHs) at the interface. The temperature-dependent I-V characteristics of the Au/BNT-BT/n-GaN MIS structures demonstrate the presence of a double GD having mean BHs of 1.07 eV and 1.91 V and standard deviations of 0.118 V and 0.214 V. Moreover, the inhomogeneous BH is found to be correlated with N ss , because U bo becomes smaller with increasing N ss . This indicates that the lateral inhomogeneity of the BH is connected to the nonuniform distribution of the density of states at the interface. Further, the conduction mechanism dominating the reverse-bias leakage current in the MIS structure is investigated.

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The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures

Cited by 97 publications

References 40 publications

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Fabrication and experimental characterization of a sol–gel derived nanostructured n-ZnO/p-Si heterojunction diode

Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN MIS Structure

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