Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN MIS Structure

Abstract

The electrical properties of Au/Bi 0.5 Na 0.5 TiO 3 (BNT)-BaTiO 3 (BT)/n-GaN metal-insulator-semiconductor (MIS) structures have been investigated in the temperature range from 120 K to 420 K by current-voltage and capacitance-voltage methods. The Au/BNT-BT/n-GaN MIS structures demonstrate nonideal behaviors indicating the presence of a nonuniform distribution of interface states. Experimental results revealed that the barrier height (U bo ), ideality factor (n), and interface state density (N ss ) of the Au/BNT-BT/n-GaN MIS structures are strongly temperature dependent. It is found that N ss decreases with an increase in temperature. Further, it is observed that U bo increases and n decreases with increasing temperature, which is attributed to barrier inhomogeneities by assuming a Gaussian distribution (GD) of barrier heights (BHs) at the interface. The temperature-dependent I-V characteristics of the Au/BNT-BT/n-GaN MIS structures demonstrate the presence of a double GD having mean BHs of 1.07 eV and 1.91 V and standard deviations of 0.118 V and 0.214 V. Moreover, the inhomogeneous BH is found to be correlated with N ss , because U bo becomes smaller with increasing N ss . This indicates that the lateral inhomogeneity of the BH is connected to the nonuniform distribution of the density of states at the interface. Further, the conduction mechanism dominating the reverse-bias leakage current in the MIS structure is investigated.

Tuned High Dielectric Constant, Low Dielectric Loss Tangent of Novel Structure Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al

“…Conferring to the base of a TE mechanism with a Gaussian distribution (GD) of the BHs. [48][49][50][51][52][53] There was an indication GD of BH is the Φbo vs n scheme. For this purpose, Plot was drawn to find any indication of GD of the BHs, and they are signified in Plot 9.…”

Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)

“…Figure 5 presents the UV-Vis absorption spectrum in the wavelength range from 200 nm to 800 nm and the band gap energy profile of ZnTiO 3 nanostructures using Tauc's equation. This equation gives the optical band gap by [16]:…”

“…with α being the absorption-coefficient, hν the emitted photon energy, C an arbitrary constant and E g band gap energy [16].…”

“…Moreover, both Au/n-Si and Au/(%7Graphene-PVA)/n-Si-type SDs with various graphene contents were built by Al-Dharob et al [5], and it was observed that the best doping ratio of graphene into the PVA polymer layer for optimum values of electronic parameters in MPS is 7% compared to the MS-type SD. Rajagopal Reddy et al [16] measured the C-V and I-V characteristics of the Au/Bi 0.5 Na 0.5 TiO 3 -BaTiO 3 (BT)/n-GaN SD at the temperature range from 120 K to 420 K and discovered that the BH and N ss in the considered MPS diode increase with increasing the temperature.…”

The effect of PVP: BaTiO3 interlayer on the conduction mechanism and electrical properties at MPS structures

“…In addition, BaTiO 3 is a great photorefractive material and also shows ferroelectric features. Due to these properties, it widely uses in the electronic and optoelectronic devices such as detectors, capacitors, and sensors [28,29]. One of the best polymers used to fabricate the MPS SDs, is the polyvinylpyrrolidone (PVP).…”