Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO₃ polymer layers at Schottky diode (SD)

Abstract

In this paper, a polyvinyl pyrrolidine (PVP) polymer layer is inserted between the metal-semiconductor (MS) structure to manufacture a metal-polymer-semiconductor (MPS) structure or Schottky diode (SD). The zinc titanate and graphene nanostructures were doped into the PVP layer individually and together to improve the electrical performance of the MPS-type SD. The crystalline size, surface morphology, and band gap energy of the ZnTiO3 nanostructures are examined by the X-Ray Diffraction (XRD), Field-Emission Scanning Electron Microscopy (FESEM), and ultraviolet-visible (UV-Vis) spectroscopy, respectively. It is common to measure the current-voltage (I-V) features (at ±3 V) of these five structures for calculating the reverse saturation current (I0), barrier height (BH), ideality factor (n), series (Rs), and shunt (Rsh) resistances as the main electrical parameters utilizing the Thermionic Emission (TE), Norde, and Cheung models. Also, the forwarded-bias energy-dependent surface states density (Nss) and the forward/reverse biased current conduction mechanisms (CCMs) are studied and discussed. The rectifying ratio (RR) of Al/PVP: Gr-ZnTiO3/p-Si SD has the highest increase among these five SDs while the lowest I0 and highest Rsh are related to the Al/PVP:Gr/p-Si (MPS2) and Al/PVP:ZnTiO3/p-Si (MPS3) SDs, respectively. Therefore, doping Gr into the PVP interlayer increases the electrical conduction in the SDs although PVP: Gr-ZnTiO3 polymer layer improves the RR of SDs.

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg3N2 interfacial layer

“…The main electrical parameters such as ideality factor (n), saturation current (I 0 ) and barrier height of diode (Φ B0 ), and rectifier performance of the structures with circular, square, and rectangular RC may extract from the linear portion of the curve, and the thermionic emission (TE) theory. The TE theory is relationship between current (I) and voltage (V) and is defined as follows [2,24,25];…”

Electrical and dielectric behaviors of Al/SiO2-surfactant/n-Si schottky structure in wide range of voltage and frequency

“…The two solutions were stirred at room temperature for 1 h, then mixed and stirred for 1 h before spin coating. The final molar ratio solution (TEOS: B rij58:H 2 O:EtOH: HCl) was 1:0.05:5.2:24:0.28 [13,14]. The mesoporous material precursor solution was then spin-coated on the n-Si wafer at 2000 rpm for 1 min.…”

“…At these frequencies, a successive semicircular arc that indicates the polarization mechanism at the interlayer owing to the effects of grains instead of grin boundaries is observed and both grain and grain boundary contributions with their electric resistances can be distinguished. The Cole-Cole profiles are a single semicircle that can be modeled by an equivalent circuit together with the parallel capacitance (C p ) & and resistance (R p ) network in series with R s[13,39].The depletion layer capacitance of the MIS SD structure can be calculated for the reverse region as follows [1, 2]:…”

Electric and dielectric responses of Au/n-Si structure by Mn doped PVC interfacial layers

“…However, the active dangling bonds on the semiconductor surface cannot be fully passivated by the insulator layer between semiconductor and metal formed using conventional techniques like thermal or anodic oxide. Thus, researchers have spent the last 20 years concentrating on improving the electric and dielectric features of these instruments by employing a pure and doped polymer/nanocomposite layer instead of conventional insulator layers [5][6][7][8][9]. Flexibility, appropriate mechanical strength, ease of manufacturing, acceptable dielectric strength, small weight, and large capacity are just a few of the many benefits of these interfacial layers [6,10,11].…”