The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique

Chen, Jiarui; Su, Yuanzhang; Pan, Chaowu; Kuang, Weizhe; Yang, Kai; Wang, Haochen; Wang, Maojun; Zhang, Chao; Zhou, Qi

doi:10.1109/ted.2022.3200301

Cited by 4 publications

(1 citation statement)

References 27 publications

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“…Finally, the variations in gate current, drain leakage, and gate capacitance were provided in order to verify the mechanism. Chen J. et al [ 17 ] investigated the device stability of p-GaN gate HEMTs under self-heating effects using the on-drain current injection technique. By analyzing the gate leakage current as well as simulating the TCAD of the electrically heated device, it was shown that the self-heating-induced V TH instability is electron trapping in the p-GaN gate stack.…”

Section: Introductionmentioning

confidence: 99%

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Dai,

Wang,

2024

Micromachines

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With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field. It has been found that GaN HEMT devices have a drift in threshold voltage under the conditions of temperature and gate stress changes. Under high-temperature conditions, the difference in gate contact also causes the threshold voltage to shift. The variation in the threshold voltage affects the stability of the device as well as the overall circuit performance. Therefore, in this paper, a review of previous work is presented. Temperature variation, gate stress variation, and gate contact variation are investigated to analyze the physical mechanisms that generate the threshold voltage (VTH) drift phenomenon in GaN HEMT devices. Finally, improvement methods suitable for GaN HEMT devices under high-temperature and high-voltage conditions are summarized.

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Section: Introductionmentioning

confidence: 99%

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Dai,

Wang,

2024

Micromachines

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Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors

Mao

2024

Physica Status Solidi (a)

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The transient heat conduction equation for the 2D electron gas layer in GaN high‐electron‐mobility transistors is developed. The Schottky barrier height and the conduction band offset seen by electrons in the 2D electron gas layer will be reduced due to self‐heating in the 2D electron gas of GaN high‐electron‐mobility transistors via quantum coupling. Such a reduction will lead to a shift in the threshold voltage. To address this issue, an analytical physical model of self‐heating in the 2D electron gas of a GaN high‐electron‐mobility transistor via quantum coupling impacts on its threshold voltage instability is proposed. The proposed model forecasts that the threshold voltage can have an exponentially dependent relation with the reciprocal of the recovery time after the stress voltage is released, as well as dependencies on the square of the drift velocity, the gate voltage, and the surrounding temperature. The experimentally observed threshold voltage shifts of GaN high‐electron‐mobility transistors confirm such dependent relationships predicted by the proposed physical model. This article provides evidence that the combination of self‐heating in the 2D electron gas layer and quantum coupling may be a possible physical origin of the threshold voltage instability in GaN high‐electron‐mobility transistors.

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On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

Chang

Yin

et al. 2023

IEEE Electron Device Lett.

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The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique

Cited by 4 publications

References 27 publications

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors

On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

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