On-Chip Integrated High-Sensitivity Temperature Sensor Based on <i>p</i>-GaN/AlGaN/GaN Heterostructure

Chang, Jie; Yin, Yulian; Du, Jiahong; Wang, Huan; Li, Haoran; Zhao, Changhui; Li, Hui; Hu, Cungang; Cao, Wenping; Tang, Xi; Yang, Shu

doi:10.1109/led.2023.3244821

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On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

Cited by 7 publications

References 33 publications

Real-time channel temperature monitoring of p-GaN HEMTs based on gate leakage current

Real-time channel temperature monitoring of p-GaN HEMTs based on gate leakage current

Recent advances in III–V nitrides: properties, applications and perspectives

Enhanced gate breakdown and electroluminescence in p-GaN gate HEMTs under pulsed switching conditions

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