Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors
Pengfei Dai,
Shaowei Wang,
Hongliang Lu
Abstract:With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field. It has been found that GaN HEMT devices have a drift in threshold voltage under the conditions of temperature and gate stress changes. Under high-temperature conditions, the difference in gate contact also causes the threshold voltage to shift. The variation … Show more
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