The coupling effect and phase transition behavior of multiple interfaces in GeTe/Sb superlattice-like films

Application of Ge2Sb2Te5 phase change films in flexible memory devices

“…The results show that the E RESET of S p is lower than that of S s thin films (9.70 × 10 −10 J). 33,34 In particular, the E RESET of the This journal is © The Royal Society of Chemistry 2022 bending state is much lower than that of the flat state. The lower operational power consumption of bending S p films is mainly related to the lower thermal conductivity of the PEEK material and the smaller grain size.…”

Simultaneously higher thermal stability and lower resistance drifting for Sb/In48.9Sb15.5Te35.6 nanocomposite multilayer films

“…Resistance drift would expand the resistance range of a single resistance state, reduce the recognition accuracy and increase the error probability. 25 Resistance drift was affected by numerous factors, such as stress release, 26 defect state relaxation 27 and size limitation. Fig.…”

“…12 Therefore, the long-range sequence could be changed to the short-range sequence to reduce the amorphous resistance drift and improve the accuracy of information reading. 25…”

Improved thermal stability and power consumption performances of Ge1Sb9 phase change thin films via doping yttrium

“…It has been established that the relationship between drift resistance and time can be CrystEngComm Paper expressed as R t = R (t/t 0 ) γ , where R t is the resistance measured at time t, t 0 is the initial state of the material, R 0 is a constant describing the material's order-of-magnitude, and γ is the exponent of the power law relationship of the resistance drifts with time. 28 As shown in Fig. 5, the resistance drift curves for the Ge 1 Sb 9 , Y 0.13 (Ge 1 Sb 9 ) 0.87 and Y 0.26 (Ge 1 Sb 9 ) 0.74 thin films were measured at 85 °C.…”