Application of Ge₂Sb₂Te₅ phase change films in flexible memory devices

Abstract

The development of high-performance flexible memory is of great significance to today's rapidly growing Internet of Things market. In this paper, Ge2Sb2Te5 phase change films were prepared by magnetron sputtering...

The microstructure and electrical and optical properties of Ge–Cu–Te phase-change thin films

“…2,3 Among various SCM candidates, an emerging technology known as phase change memory (PCM) offers prospective gains with regard to speed, excellent cycling endurance to 107 operations and storage capacity, computing capabilities, and steady process maturity for 3D integrated circuits (3D-ICs). 1,[4][5][6] The principle of PCM is based on the memory effects of a phase change material, exhibiting high-resistance semiconductor characteristics in an amorphous form and low-resistance metal properties in a crystalline form, and the phase change can be reversibly triggered by an electric pulse or a laser. [7][8][9][10] The huge resistance difference can be utilized to store binary data as "0" or "1".…”

Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials

“…GST is also widely used in the PCM due to its rapid phase transition feature [1]. PCM has successfully exhibited as a high-speed memory device [10] and is currently being explored for multiple data storage [11,12]. The data retention capability of PCM relies on the resistance stability of amorphous and crystalline phases [13].…”