The Compact Modeling of Zero Temperature Coefficient (ZTC) Point of DTMOS

Abstract

For the first time, the compact analytical expressions of zero-temperature-coefficient (ZTC) point modeling of DTMOS transistor are successfully presented in detail. Newly analytical formulations are developed for both linear and saturation regions of DTMOS transistor operation that ensure the drain current to be temperature independent for the optimal gate voltage. The maximum error of 0.87% and 2.35% in the linear and saturation regions confirms good agreement between our DTMOS ZTC point model and the experimental data, respectively. Compared to traditional MOSFET, the lower V g (ZTC) with higher overdrive current of DTMOS improves the speed and efficiency of ICs for the low power consumption requirement in green CMOS technology.