The class-E/F family of ZVS switching amplifiers

Kee, S.; Aoki, Ichiro; Hajimiri, Ali; Rutledge, D.B.

doi:10.1109/tmtt.2003.812564

Cited by 238 publications

(142 citation statements)

References 24 publications

(40 reference statements)

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“…Timedomain simulations are carried out in LTSPICE using the models described below. Figure 18 shows the structure of the E/F odd [11] power amplifier used in the simulations; this topology is a variant of the "current-mode class D" amplifier [12]. The power amplifier operates from an input voltage V in = 125 V, leading to peak device voltages of approximately 400 V. The device model used roughly approximates the characteristics of ARF521 RF Power MOSFETs (and ARF475FL push-pull pairs).…”

Section: F Example System Simulation and Comparisonmentioning

confidence: 99%

“…1). Because the two signals are of constant amplitude, they can be synthesized with highlyefficient PAs including partially-and fully-switched-mode designs such as classes D [3][4][5], E [6,7], F [8][9][10], E/F [11] and current-mode D [12], Inverse F [13], Φ [14,15], etc. (These amplifiers can be made highly efficient in part because they needn't have the capability to provide linear output control.)…”

Section: Introductionmentioning

confidence: 99%

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A new power combining and outphasing modulation system for high-efficiency power amplification

Perreault

2010

2010 53rd IEEE International Midwest Symposium on Circuits and Systems

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Abstract---This paper describes a new power combining and outphasing system that provides both high efficiency and linear output control. Whereas conventional outphasing systems utilize two power amplifiers, the system introduced here combines power from four or more amplifiers. The proposed technique overcomes the loss and reactive loading problems of previous outphasing systems. It provides ideally lossless power combining, along with resistive loading of the individual power amplifiers over a very wide output power range. A conceptual development illustrating the operating principles of the system is provided, along with a representative design, detailed analysis, and supporting simulations. The relation of the proposed technique to multi-level resistance compression is also described. It is anticipated that the new power combining and outphasing modulation approach will find widespread use in applications where both high linearity and high efficiency are desired.

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Section: F Example System Simulation and Comparisonmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A new power combining and outphasing modulation system for high-efficiency power amplification

Perreault

2010

2010 53rd IEEE International Midwest Symposium on Circuits and Systems

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“…In recent years, highly efficient PAs are also required for wireless power transmission applications to achieve high-reliable operation. Many types of amplifiers have been reported to improve efficiency, such as class E [1], class F [2], class E/F [3] so far. Among these types of PAs, the class E structure requires an extra shunt capacitor at the output side of the transistor in order to cancel the dissipation power at the active element.…”

Section: Introductionmentioning

confidence: 99%

Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency

Kizilbey

2013

IEICE Electron. Express

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In this paper, a highly efficient prototype of Gallium Nitride high electron mobility transistor (GaN HEMT) power amplifier using elliptic low pass filter output network is proposed, fabricated and measured. A fifth-order elliptic low-pass filter network is designed and implemented for the output matching, which provides optimized fundamental and harmonic impedances. Simulation and experimental results show that a Class-E PA is realized from 2.7 to 2.9 GHz with 10-W (40 dBm) output power, 10 dB gain and a measured efficiency of 86%, which is the highest reported today for such a frequency band and output power.

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“…A class-E/F amplifier has been proposed by Kee et al [2] to combine the advantages of both class-E and class-F operations. By selective tuning of harmonic components, the class-E/F amplifier can have the benefits of class F , which are low peak voltage and low rms current, using a simple push-pull configuration.…”

mentioning

confidence: 99%

Global stability analysis and stabilization of a class-E/F amplifier with a distributed active transformer

Jeon

Suárez

Rutledge

2005

IEEE Trans. Microwave Theory Techn.

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Abstract-Power amplifiers (PAs) often exhibit instabilities giving rise to frequency divisions or spurious oscillations. The prediction of these instabilities requires a large-signal stability analysis of the circuit. In this paper, oscillations, hysteresis, and chaotic solutions, experimentally encountered in a high-efficiency class-E F odd PA with four transistors combined using a distributed active transformer, are studied through the use of stability and bifurcation analysis tools. The tools have enabled an in-depth comprehension of the different phenomena, which have been observed in simulation with good agreement with experimental results. The study of the mechanism generating the instability has led to a simplified equivalent circuit from which the optimum stabilization network has been determined. The network enables a global stabilization of the circuit for all the expected operating values of the amplifier bias voltage and input power. This has been achieved with negligible degradation of the amplifier performance in terms of drain efficiency and output power. The stable behavior obtained in simulation has been experimentally confirmed.

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The class-E/F family of ZVS switching amplifiers

Cited by 238 publications

References 24 publications

A new power combining and outphasing modulation system for high-efficiency power amplification

A new power combining and outphasing modulation system for high-efficiency power amplification

Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency

Global stability analysis and stabilization of a class-E/F amplifier with a distributed active transformer

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