Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency

Kizilbey, Oguzhan

doi:10.1587/elex.10.20120960

Cited by 9 publications

(7 citation statements)

References 9 publications

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“…5(a) shows the scatter parameters of the input network, owe to the low pass character, the second harmonic and the third harmonic is suppressed, which results a faster switching operation time. In the output network, the series L 0 C 0 resonant has a limited frequency response, to implement the broadband class E PA, low pass match [9,10] is applied to impedance matching and suppress harmonic [11]. Fig.…”

Section: Design Of Class E Pamentioning

confidence: 99%

A class E GaN microwave power amplifier accounting for parasitic inductance of transistor

Rong

Liu

et al. 2017

IEICE Electron. Express

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The effects of parasitic inductance of transistor on finite dc-feed inductance type class E microwave power amplifier is analyzed in this letter. We find that the frequency bandwidth can be improved by fully consideration of the output parasitic inductance of transistor. To validate the method, a GaN power amplifier by using the proposed topology is designed for demonstration purpose. Experimental results show that the amplifier is realized from 2.5 GHz to 3.5 GHz (33.3%) with measured drain efficiency larger than 60%, which show good agreement with the simulated results.

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Section: Design Of Class E Pamentioning

confidence: 99%

A class E GaN microwave power amplifier accounting for parasitic inductance of transistor

Rong

Liu

et al. 2017

IEICE Electron. Express

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“…Low-pass matching networks (LMNs), one of the common ways of designing broadband class-E PAs, have shown high performance in published papers [1,2]. The LMN has two functions of low-pass filter, as a function of a resonant circuit and a matching network.…”

Section: Output Matching Networkmentioning

confidence: 99%

“…In a modern PA design, wide bandwidth and high efficiency are two major requirements that increase the number of frequency bands and reduce thermal problems in the power devices and their sizes and auxiliary costs. A switch-mode class-E PA with shunt capacitance is attractive for these purposes, due to its high efficiency and simple topology [1,2]. However, [1] and [2] only concentrate on simplifying the analysis of the class-E PA while neglecting the actual characteristic of the shunt capacitance.…”

Section: Introductionmentioning

confidence: 99%

“…A switch-mode class-E PA with shunt capacitance is attractive for these purposes, due to its high efficiency and simple topology [1,2]. However, [1] and [2] only concentrate on simplifying the analysis of the class-E PA while neglecting the actual characteristic of the shunt capacitance. In fact, the operation of the linear shunt capacitance class-E PA in theory is completely different from its practical operation.…”

Section: Introductionmentioning

confidence: 99%

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A Highly Efficient Broadband Class-E Power Amplifier with Nonlinear Shunt Capacitance

Dang-Duy

Ha‐Van

Jeong

et al. 2017

J Electromagn Eng Sci

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A new approach to designing a broadband and highly efficient class-E power amplifier based on nonlinear shunt capacitance analysis is proposed. The nonlinear shunt capacitance method accurately extracts optimum class-E power amplifier parameters, including an external shunt capacitance and an output impedance, at different frequencies. The dependence of the former parameter on the frequency is considered to select an optimal value of external shunt capacitor. Then, upon determining the latter parameter, an output matching network is optimized to obtain the highest efficiency across the bandwidth of interest. An analytical approach is presented to design the broadband class-E power amplifier of a MOSFET transistor. The proposed method is experimentally verified by a 140-170 MHz class-E power amplifier design with maximum added power efficiency of 82% and output power of 34 dBm.Key Words: Broadband, Class-E Power Amplifier, MOSFET Transistor, Nonlinear Output Capacitance, PAE. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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“…The low pass input network in [12] is adopted for operation frequency. Shunt resistance R 1 , capacitance C 2 and resistance R 2 in the input network are used to improve the low frequency stability.…”

Section: Introductionmentioning

confidence: 99%

A broadband microwave GaN HEMTs class EF<sub>3</sub> power amplifier with π-type network

Rong

Liu

et al. 2017

IEICE Electron. Express

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A GaN HEMTs class EF 3 power amplifier (PA) with π-type network for broadband operation is presented in this paper. The π-type network is constructed by shunt capacitance, series inductance and finite dc-feed inductance, where the series inductance includes the parasitic inductance effects of transistor. As a result, the topology can make full use of the parasitic effects of transistor to raise the operation frequency. Moreover, it is found that this topology can also increase the frequency bandwidth. For demonstration purpose, a PA prototype based on the topology is fabricated. Experimental results show that the amplifier can operate from 2.9 GHz to 4.0 GHz (fractional bandwidth 31.8%) with a measured drain efficiency higher than 67%, and the output power is greater than 37.4 dBm. The proposed structure can be a good candidate for design of high efficiency and broadband class E power amplifiers. Keywords: class EF 3 , power amplifier, GaN HEMT, π-type network Classification: Microwave and millimeter-wave devices, circuits, and modules

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Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency

Cited by 9 publications

References 9 publications

A class E GaN microwave power amplifier accounting for parasitic inductance of transistor

A class E GaN microwave power amplifier accounting for parasitic inductance of transistor

A Highly Efficient Broadband Class-E Power Amplifier with Nonlinear Shunt Capacitance

A broadband microwave GaN HEMTs class EF<sub>3</sub> power amplifier with π-type network

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