In this paper, a highly efficient prototype of Gallium Nitride high electron mobility transistor (GaN HEMT) power amplifier using elliptic low pass filter output network is proposed, fabricated and measured. A fifth-order elliptic low-pass filter network is designed and implemented for the output matching, which provides optimized fundamental and harmonic impedances. Simulation and experimental results show that a Class-E PA is realized from 2.7 to 2.9 GHz with 10-W (40 dBm) output power, 10 dB gain and a measured efficiency of 86%, which is the highest reported today for such a frequency band and output power.
Abstract:In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7-2.9 GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381 mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10 W (40 dBm) output power with 76% and 82% power added efficiency (PAE), respectively. Both PAs have state-of-the-art PAE performance compared to the PAs in the literature. Furthermore, the measurement results show that; under the same operation conditions, the inverse class-F PA has greater PAE than the class-F PA.
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