The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses

Ristić, Goran S.; Andjelković, Marko; Jakšić, A.

doi:10.1016/j.apradiso.2015.04.009

Cited by 17 publications

(8 citation statements)

References 23 publications

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“…1. Although ΔV T is not generally linear and saturates with increasing D, (10) the linear function ΔV T = S ⋅ D can be employed for small doses, where S is the sensitivity. Using this function, we fitted ΔV T with D and obtained a very good agreement (the correlation coefficients r 2 were greater than 0.99).…”

Section: Resultsmentioning

confidence: 99%

“…For pMOSFETs with an Al gate, such as the RADFETs used in this study, for the zero-bias mode (no gate voltage), there is a small positive gate voltage of V wf = 0.33 V due to the difference in the work function between the Al gate and the n-type silicon substrate, which results in a small positive external electric field in the gate oxide. (10) The electrical characteristics of the RADFETs during IR and SA were measured using an automatic system guided by a program written in C# (see Ref. 11 for more details).…”

Section: Methodsmentioning

confidence: 99%

“…where C ox = ε ox /t ox is the gate oxide capacitance per unit area, ε ox = 3.45 × 10 −13 F/cm is the permittivity of silicon dioxide, and e is the absolute value of the electron charge. The STs contain slow switching traps (SSTs) near the oxide/substrate interface and fast switching traps (FSTs) exactly at the interface, and ΔN st can be expressed as (10) st sst fst…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm

Ristić¹,

Andjelković²,

Duane³

et al. 2021

Sensors and Materials

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We investigated the influence of gamma radiation of 50 Gy(H 2 O) on radiation-sensitive p-channel metal-oxide-semiconductor field-effect transistors with an Al gate (RADFETs) with gate oxide thicknesses of 400 and 1000 nm and gate voltages of 0 and 5 V. The obtained results showed that the sensitivity S at a given gate voltage increases with the square of the gate oxide thickness. After irradiation (IR), spontaneous annealing (SA) was performed at room temperature without voltage at the gate. We present the behaviors of fixed traps and switching traps, determined by the midgap technique, and that of fast switching traps, determined by the charge-pumping technique, during IR and SA. A very important characteristic of dosimetric transistors is fading, which represents the recovery of the threshold voltage of the irradiated RADFETs during SA. The maximum fading is about 15% after 9100 h, except for the RADFETs with a gate oxide thickness of 1000 nm and a gate voltage of 5 V, for which it is about 30%. A fitting equation for fading was proposed, which fitted the experimental fading values very well.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm

Ristić¹,

Andjelković²,

Duane³

et al. 2021

Sensors and Materials

Self Cite

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“…An equation that very well fitted the dependence of ΔV T on absorbed dose, D, was proposed in (G.S. Ristić et al, 2011;Ristic et al, 2015):…”

Section: Resultsmentioning

confidence: 99%

“…RADFETs manufactured at the Tyndall National Institute, Cork, Ireland were used in this study. They have 400-nm-thick oxide, and threshold voltage before radiation about 0.9 V (more details and pictures of used RADFETs can be found in (Andjelković et al, 2015;Ristic et al, 2015)).…”

Section: Methodsmentioning

confidence: 99%

Radiation sensitive MOSFETs irradiated with various positive gate biases

Ristić

Ilić

Duane

et al. 2021

Journal of Radiation Research and Applied Sciences

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The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H 2 O). The results of threshold voltage, V T , during irradiation with various positive gate biases showed the increase in V T with gate bias. The threshold voltage shift, ΔV T , during irradiation was fitted very well. The contributions of both the fixed traps (FTs) and switching traps (STs) during radiation on ΔV T were analyzed. The results show the significantly higher contribution of FTs than STs. A function that describes the dependence of threshold voltage shift and its components on gate bias was proposed, which fitted the experimental values very well. The annealing at the room temperature without gate bias of irradiated RADFETs was investigated. The recovery of threshold voltage, known as fading, slightly increase with the gate bias applied during radiation. The ΔV T shows the same changes as the threshold voltage component due to fixed states, ΔV ft , while there is no change in the threshold voltage component due to switching traps, ΔV st .

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