The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

“…This patch radius value is 20.80 times lower than the depletion layer width w ¼ 387 nm. Leroy et al [35] have obtained a patch radius value for Au/n-GaAs SBDs that is 11.66 times lower than the depletion layer width. The value of n = 1.052 from the fitting parameters to the experimental data is the same as value of 1.053 obtained from the experimental I-V characteristics for the Ni/n-GaAs/In SBD by Eq.…”

“…That is, the BHs become smaller as the ideality factors increase. This finding may be attributed to lateral inhomogeneities of the BHs in Schottky diodes [27][28][29][30][31][32][33][34][35][36][37]. In addition, it has been mentioned by Tung and co-workers [27,28] and Mönch and co-workers [29][30][31][32][33] that higher ideality factors among identically prepared diodes were often found to accompany lower observed BHs.…”

“…2. The straight line of the experimental effective BHs versus ideality factors plot that corresponds to the region with large BHs and low patch density below n ffi 1.1 [29][30][31][32][33][34][35][36][37] was extrapolated to n = 1 for determining the laterally homogeneous BH.…”

“…Our purpose is to determine laterally homogeneous BH of Ni/n-GaAs/In Schottky barrier diodes (SBDs) by help of the linear relationship between effective BHs and ideality factors which is theoretically [27,28] and experimentally [29][30][31][32][33][34][35][36][37] confirmed. For this purpose, the Ni/n-GaAs/In SBDs (15 dots) with doping density of about 7.3 Â 10 15 prepared and used the linear region with large BHs and low patch density below n ffi 1.1 [28][29][30][31][32][33][34][35][36][37].…”

“…For this purpose, the Ni/n-GaAs/In SBDs (15 dots) with doping density of about 7.3 Â 10 15 prepared and used the linear region with large BHs and low patch density below n ffi 1.1 [28][29][30][31][32][33][34][35][36][37].…”