The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes

Duman, S.; Doğan, S.; Gürbulak, B.; Türüt, A.

doi:10.1007/s00339-008-4411-8

Cited by 26 publications

(5 citation statements)

References 33 publications

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“…Its realization, in practice, requires development of high-temperature packaging as well as an appropriate chip metallization scheme. Nickel and titanium are commonly used for the formation of SB contacts to SiC [5][6][7][8][9] but they interact with silicon carbide at temperatures above 400 • C [10]. 5 Author to whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC

Никитина

Vassilevski

Horsfall

et al. 2009

Semicond. Sci. Technol.

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4H-SiC Schottky diodes with nickel silicide contacts were formed by consecutive deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick, followed by annealing at temperatures between 600 and 750 • C. It was found that contacts with barrier heights of 1.45 eV which consist mainly of single nickel monosilicide (NiSi) phase were formed in the 600-660 • C temperature range, while annealing at around 750 • C led to the formation of Ni 2 Si Schottky contacts with barrier heights of 1.1 eV. Annealing at intermediate temperatures resulted in the nucleation of Ni 2 Si grains embedded in the NiSi film which were directly observed by micro-Raman mapping. It was shown that the thermodynamically unfavourable NiSi phase appeared in the 600-660 • C temperature range due to control of the Ni-SiC solid-state chemical reaction by nickel diffusion through the titanium diffusion barrier.

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Section: Introductionmentioning

confidence: 99%

Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC

Никитина

Vassilevski

Horsfall

et al. 2009

Semicond. Sci. Technol.

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“…(3) and (4) as a function of temperature are shown in Fig. [22][23][24][25][26][27][28] Therefore, in Secs. This figure reveals that the value of ideality factor is decreasing while barrier height is increasing with an increase in temperature.…”

Section: A Forward Bias I-v Characteristicsmentioning

confidence: 99%

Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor

Kumar

Maan

Akhtar

2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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This paper presents the thermal sensitivity variation trend of Ni/4H-nSiC (0001) Schottky diode based temperature sensor, equipped with floating metal guard ring and oxide field plate as edge terminations in low current regime, i.e., ranging from 1 nA to 5 pA. Various measurements were carried out at temperatures ranging from 233 K to 473 K in steps of 20 K. An imperative outcome of the present study, which is in contrast with the theory, is that there exists an anomaly in the device thermal sensitivity behaviour after a range of current. The thermal sensitivity of the fabricated device, calculated from the slope of forward voltage versus temperature plot, was found to be varied from 3.11 mV/K at 1 nA to 3.32 mV/K at 5 pA with standard error of 60.03 mV/K. A detailed analysis of I-V-T characteristics by taking into account all the possibilities for variation in the barrier height and the ideality factor with temperature emphasizes that there exist barrier height inhomogeneities at the metal-semiconductor interface in the fabricated device. These observations indicate that anomaly in the device thermal sensitivity was due to the barrier height inhomogeneities present in the device.

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“…These advantages, compared to those of electronics based on silicon substrates, result from the higher band gap, higher thermal conductivity, higher dielectric disruptive strength, and higher saturation electron drift velocity of SiC [1,2]. Unfortunately, however, some important process steps for silicon carbide-based devices are not yet well established, e.g., the deposition of ohmic contacts, which has continuously been a topic of current research [3][4][5][6]. To generate ohmic contacts on SiC, metals such as nickel, tungsten, or titanium are deposited on the wafer using physical vapor deposition (PVD) [3] followed by a so-called rapid thermal process (RTP) to transform the contact's Schottky behavior into an ohmic one.…”

Section: Introductionmentioning

confidence: 99%

Temperature and Stress Simulation of 4H-SiC during Laser-Induced Silicidation for Ohmic Contact Generation

Adelmann

Hellmann

2017

Metals

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Abstract:We report here on the simulation of temperature and stress evolution of 4H-SiC during laser-induced silicidation to locally generate ohmic contacts between the semiconductor and nickel metallization. The simulation is based on optical free carrier absorption, thermal conduction, and thermal radiation. Our results show that, during laser irradiation, similar temperatures and correspondingly similar contact resistances, as compared to conventional oven-driven annealing processes, are achievable, yet with the advantageous potential to limit the temperature treatment spatially to the desired regions for electrical contacts and without the necessity of heating complete wafers. However, due to temperature gradients during local laser silicidation, thermal induced stress appears, which may damage the SiC wafer. Based on the simulated results for temperature and stress increase, we identify an optimized regime for laser-induced local silicidation and compare it to experimental data and observations.

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The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes

Cited by 26 publications

References 33 publications

Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC

Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H–SiC

Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor

Temperature and Stress Simulation of 4H-SiC during Laser-Induced Silicidation for Ohmic Contact Generation

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