Micromotion between the brain and implanted electrodes is a major contributor to the failure of invasive brain–machine interfaces. Movements of the electrode tip cause recording instabilities while spike amplitudes decline over the weeks/months post-implantation due to glial cell activation caused by sustained mechanical trauma. We have designed a sinusoidal probe in order to reduce movement of the recording tip relative to the surrounding neural tissue. The probe was microfabricated from flexible materials and incorporated a sinusoidal shaft to minimize tethering forces and a 3D spheroid tip to anchor the recording site within the brain. Compared to standard microwire electrodes, the signal-to-noise ratio and local field potential power of sinusoidal probe recordings from rabbits was more stable across recording periods up to 678 days. Histological quantification of microglia and astrocytes showed reduced neuronal tissue damage especially for the tip region between 6 and 24 months post-implantation. We suggest that the micromotion-reducing measures incorporated into our design, at least partially, decreased the magnitude of gliosis, resulting in enhanced longevity of recording.

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Nickel-based contacts, deposited on 4H-SiC C-face substrates, were annealed at temperatures ranging from 800to1040°C and the phase composition of the contact layers analyzed by x-ray diffraction techniques. Ni2Si was identified as the dominant phase for annealing temperatures exceeding 925°C, with further increases in concentration with increasing temperature. At the highest annealing temperature of 1040°C, a 40nm thick nanocrystalline graphite film at the Ni2Si–SiC interface was discovered and its presence confirmed by Raman spectroscopy. The roles of the Ni2Si and graphite films in the formation of ohmic contacts were determined by their subsequent exclusion from the contact composition. Following deposition and annealing, the Ni2Si and graphite layers were etched away selectively and replaced with new metal films deposited at room temperature and without any annealing. Measurement of the current-voltage characteristics revealed that the ohmic nature of the contacts was preserved after removal of the Ni2Si and the graphite layers. It is concluded that the main reason for the conversion of Schottky to ohmic contacts during high-temperature annealing is a change of the electrical properties of the underlying SiC rather than being attributable to the presence of nickel silicides or graphite. It is proposed that a solid-state reaction between nickel and silicon carbide, similar to catalytic graphitization of carbon, may take place during Ni–SiC contact annealing at the temperature of 1040°C. This process may result in the creation of sufficient carbon vacancies in the near-interface region of the SiC to allow increased electron transport through the Schottky barrier.