Prospects for SiC electronics and sensors

Wright, N. G.; Horsfall, Alton B.; Vassilevski, Konstantin

doi:10.1016/s1369-7021(07)70348-6

Cited by 190 publications

(85 citation statements)

References 60 publications

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“…1 In this respect, silicon carbide (SiC) is one of the most promising candidates owing to its excellent electrical and structural properties. SiC exists in a large number of polytypes that can be all thought of resulting from stacking three types of bilayer structures (A, B and C) in a certain periodic sequence.…”

mentioning

confidence: 99%

Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide

Rubano¹,

Wolf²,

Kampfrath³

2014

Applied Physics Letters

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The terahertz conductivity of photoinduced charge carriers in two common polytypes of silicon carbide, 3C-SiC and 6H-SiC, is studied on picosecond timescales using an optical-pump / THz-probe technique. We find that the conductivity, measured from 0.7 to 3 THz, is well described by the Drude model, and obtain a velocity relaxation time of 75 fs, independent of sample and charge-carrier density. In contrast, the carrier relaxation rates in the two polytypes differ by orders of magnitude: in 6H-and 3C-SiC, recombination proceeds on a time scale of few picoseconds and beyond nanoseconds, respectively.The technological demand for high-power, hightemperature, and high-field electronic devices requires robust base materials. 1 In this respect, silicon carbide (SiC) is one of the most promising candidates owing to its excellent electrical and structural properties. SiC exists in a large number of polytypes that can be all thought of resulting from stacking three types of bilayer structures (A, B and C) in a certain periodic sequence. The most commonly encountered polytypes are 3C-SiC (stacking order ABC) and 6H-SiC (ABCACB), resulting in a zincblende (two atoms per unit cell) and hexagonal structure (twelve atoms per unit cell), respectively. 2 At room temperature, 3C-and 6H-SiC have an an indirect electronic energy gap of 2.36 eV and 3.0 eV, respectively. 2SiC exhibits exceptional properties that are to a large extent related to the Si-C bond, leading to a stronger localization of the charge density and a larger band gap compared to Si. 2,3 For example, the thermal conductivity of 4.9 and 5.0 W/cm K and breakdown electric field of 3.2 and 1.5 MV/cm for 6H-SiC and 3C-SiC, respectively, 4,5 are about 3 to 5 times larger than those of Si. 2 In addition, the various polytypes make SiC an interesting host material for controlling single electron spins. 6 Also, 6H-SiC may serve as suitable starting material for large-scale graphene production. 7 In order to improve the quality and performance of SiC-based devices, knowledge of fundamental parameters such as the mobility of charge carriers is crucial. Moreover, charge transport is also of considerable interest from the perspective of fundamental physics. So far, the carrier mobility has not been measured in the case of intrinsic samples since they are wide band-gap insulators. A possible approach is to create a transient free-carrier population, for instance by exciting the material with a light pulse. The optical generation of charge carriers circumvents complications arising from chemical doping and, in addition, provides the opportunity to measure out-of-equilibrium parameters. a) Electronic mail: rubano@fisica.unina.it So far, the dynamics of photoinduced charge carriers in intrinsic 3C-and 6H-SiC has been studied using pumpprobe experiments 8-10 , however, with a time resolution of nanoseconds and at optical probe frequencies, far above the charge-carrier scattering rates that usually lye in the terahertz (THz) frequency range. 12 Deeper insight could be obtained by per...

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mentioning

confidence: 99%

Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide

Rubano¹,

Wolf²,

Kampfrath³

2014

Applied Physics Letters

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“…SiC has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness [1][2][3][4][5][6][7][8] . Table 1 shows a summary of SiC properties at room temperature in comparison to Si and other wide bandgap semiconductors.…”

Section: Silicon Carbidementioning

confidence: 99%

“…The potential is composed of 1) which is an external potential from the nuclei, 2) the term which is a potential created by an electronic density and 3) which is a new potential containing all N-particle interactions. In this way, Eq.…”

Section: Kohn and Shammentioning

confidence: 99%

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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SiC is a wide bandgap semiconductor with many attractive properties. It has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness. Typically, SiC homoepitaxial layers are grown using the chemical vapor deposition (CVD) technique. Experimental studies of SiC CVD have been limited to post-process measuring of the layer rather than in situ measurements. In most cases, the observations are presented in terms of input conditions rather than in terms of the unknown growth condition near the surface. This makes it difficult to really understand the underlying mechanism of what causes the features observed experimentally. With help of computational methods such as computational fluid dynamic (CFD) we can now explore various variables that are usually not possible to measure. CFD modeling of SiC CVD, however, requires inputs such as thermochemical properties and chemical reactions, which in many cases are not known. In this thesis, we use quantum chemical calculations to provide the missing details complementary to CFD modeling.We first determine the thermochemical properties of the halides and halohydrides of Si and C species, SiHnXm and CHnXm, for X being F, Cl and Br which were shown to be reliable compared to the available experimental and/or theoretical data. In the study of gas-phase kinetics, we combine ab initio methods and DFTs with conventional transition state theory to derive kinetic parameters for gas phase reactions related to Si-H-X species. Lastly, we study surface adsorptions related to SiC-CVD such as adsorptions of small C-H and Si-H-X species, and in the case of C-H adsorption, the study was extended to include subsequent surface reactions where stable surface products may be formed. iv SammanfattningSiC är ett halvledarmaterial med stort bandgap som har många attraktiva egenskaper. Det har fått särskilt mycket uppmärksamhet inom kraftkomponenter och sensorer, men också för tillämpningar inom biomedicin och biosensorer. Detta beror på materialets stora bandgap, förmågan att klara höga elektriska fält, goda värmeledningsförmåga och kemiska stabilitet. Epitaxiska skikt av SiC för kommersiella tillämpningar tillverkas med hjälp av kemisk ångdepo-sition (Chemical Vapor Deposition, CVD). Experimentella studier av SiC CVD begränsas till mätningar som görs i efterhand, snarare än under processens gång. För det mesta görs observationer med utgångspunkt från processens ingångsvärden istället för från de okända tillväxtförhållandena vid ytan. Detta gör det svårt att verkligen förstå de underliggande mekanismerna för de observerade experimentella resultaten. Med hjälp av beräkningsmetoder, såsom computational fluid dynamics (CFD) kan vi utforska olika variabler som vanligtvis inte går att mäta. Dock kräver CFD-modellering av SiC CVD ingångs-data i form av termokemiska egenskaper och kemiska reaktion...

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“…Furthermore, SiC is a wide energy gap semiconductor widely used in electronics, in particular it is very attractive to applications in opto-, high-frequency, and high power microelectronics due to its unique properties such as large critical breakdown electric eld, high-temperature stability and high thermal conductivity [6]. Antimony is also an important material in electronics and optoelectronics technologies.…”

Section: Introductionmentioning

confidence: 99%

AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)

et al. 2014

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Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modications of Sb lms deposited on 6H-SiC(0001) surface. The lms are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the VolmerWeber mode. Ultrathin (up to 3 nm on average) Sb lms which consist of no coalesced islands can be modied by moving the island over the substrate surface by the AFM tip. Thicker lms, which are rmer due to the coalescence, can be modied by the eld and/or current produced by STM tip.Final result of the modications is adsorbate free 6H-SiC(0001) surface restitution over the modied area.

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Prospects for SiC electronics and sensors

Cited by 190 publications

References 60 publications

Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide

Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)

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