Temperature-dependent barrier height in CdSe Schottky diode

Tripathi, S. K.

doi:10.1007/s10853-010-4601-6

Cited by 37 publications

(7 citation statements)

References 25 publications

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“…Equation does an excellent job of fitting our experimental I – V curves for all five tn-ELJs and w CdSe values (Figure a). The fitting parameters required to produce these curves (Table ) are also physically reasonable, involving the known Richardson constant and barrier heights in the range from 0.52 to 0.64 eVclose to those reported for macroscopic CdSe–Au Schottky barriers . We conclude that for | E app | < 1.0 V, I – V curves for tn-ELJs are well described by the back-to-back Schottky barrier model. − …”

Section: Resultssupporting

confidence: 62%

“…The fitting parameters required to produce these curves ( Table 2.1) are also physically reasonable, involving the known Richardson constant and barrier heights in the range from 0.52 -0.64 eV -close to those reported for macroscopic CdSe-Au Schottky barriers. [58] We conclude that for |E app | < 1.0 V, I-V curves for tn-ELJs are well described by the back-to-back Schottky barrier model. [39,37,8] For |E app | > 1.0 V, however, the currents predicted by Eq.…”

Section: Process Flowmentioning

confidence: 55%

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Electrodeposited, Transverse Nanowire Electroluminescent Junctions

Qiao

Dutta

et al. 2016

ACS Nano

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The preparation by electrodeposition of transverse nanowire electroluminescent junctions (tn-ELJs) is described, and the electroluminescence (EL) properties of these devices are characterized. The lithographically patterned nanowire electrodeposition process is first used to prepare long (millimeters), linear, nanocrystalline CdSe nanowires on glass. The thickness of these nanowires along the emission axis is 60 nm, and the width, wCdSe, along the electrical axis is adjustable from 100 to 450 nm. Ten pairs of nickel-gold electrical contacts are then positioned along the axis of this nanowire using lithographically directed electrodeposition. The resulting linear array of nickel-CdSe-gold junctions produces EL with an external quantum efficiency, EQE, and threshold voltage, Vth, that depend sensitively on wCdSe. EQE increases with increasing electric field and also with increasing wCdSe, and Vth also increases with wCdSe and, therefore, the electrical resistance of the tn-ELJs. Vth down to 1.8(±0.2) V (for wCdSe ≈ 100 nm) and EQE of 5.5(±0.5) × 10(-5) (for wCdSe ≈ 450 nm) are obtained. tn-ELJs produce a broad EL emission envelope, spanning the wavelength range from 600 to 960 nm.

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Section: Resultssupporting

confidence: 62%

Section: Process Flowmentioning

confidence: 55%

Electrodeposited, Transverse Nanowire Electroluminescent Junctions

Qiao

Dutta

et al. 2016

ACS Nano

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“…34,35 Forward bias [Au(−)] is associated both with higher current (Figure 4a) and stronger EL light emission (vide infra) and within this regime, eq 1 predicts experimental I−V curves for devices with all five CdSe shell thicknesses and across the entire E app range measured here (Figure 4b). The fits to our data using eq 1 produce parameters summarized in Table 2 that are physically reasonable including barrier heights in the range from 0.59 to 0.67 eV that are in the range of barriers reported for macroscopic CdSe−Au Schottky barriers 36 and CdSe− PEDOT:PSS Schottky barriers. 37 The tentative conclusion is that in the Au−CdSe−PEDOT:PSS device, the two Schottky junctions are in full control of carrier transport.…”

Section: Table 2 Fitting Parameters For the Calculation Of I−v Curvesmentioning

confidence: 61%

Rapid, Wet Chemical Fabrication of Radial Junction Electroluminescent Wires

Qiao¹,

Ogata²,

Jha³

et al. 2018

ACS Appl. Mater. Interfaces

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A wet chemical process involving two electrodeposition steps followed by a solution casting step, the "EESC" process, is described for the fabrication of electroluminescent, radial junction wires. EESC is demonstrated by assembling three well-studied nanocrystalline (or amorphous) materials: Au, CdSe, and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). The tri-layered device architecture produced by EESC minimizes the influence of an electrically resistive CdSe emitter layer by using a highly conductive gold nanowire that serves as both a current collector and a negative electrode. Hole injection, at a high barrier CdSe-PEDOT:PSS interface (ϕ ≈ 1.1 V), is facilitated by a contact area that is 1.9-4.7-fold larger than the complimentary gold-CdSe electron-injecting contact (ϕ ≈ 0.6 V), contributing to low-voltage thresholds (1.4-1.7 V) for electroluminescence (EL) emission. Au@CdSe@PEDOT:PSS wire EL emitters are 25 μm in length, amongst the longest so far demonstrated to our knowledge, but the EESC process is scalable to nanowires of any length, limited only by the length of the central gold nanowire that serves as a template for the fabrication process. Radial carrier transport within these multishell wires conforms to the back-to-back diode model.

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“…In (1) and ( 2), q is the element charge constant, V is bias voltage, n is the ideality factor, T is the absolute temperature, k is the Boltzmann constant, φB is the SBH, and A* is the effective Richardson's constant (9.2 A•cm −2 •K −2 ) for InAlAs. 23 The SBH is calculated from Js obtained from the measured value and is defined as:…”

Section: Resultsmentioning

confidence: 99%

Phase Separation Induced Schottky Barrier Height Change in InAlAs/InP Heterostructure-based HEMT Devices

muhamd¹,

Yaha²,

Zahran³

2022

ECS J. Solid State Sci. Technol.

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The effect of phase separation phenomenon in InAlAs layers grown by metal-organic chemical vapor deposition on the Schottky barrier height (SBH) is investigated. The phase separation into In-rich and Al-rich InxAlyAs columns of InAlAs (x=0.52, y=0.48) layers was observed when we grow them at a relatively low temperature below 600°C. From the photoluminescence spectrum investigation, we found that the band-gap energy decreased from 1.48 eV for a homogeneous In0.52Al0.48As sample to 1.19 eV for a phase-separated InxAl1-xAs sample due to the band-gap lowering effect by In-rich InxAl1-xAs (x > 0.7) region. From the current density-voltage analysis of the InAlAs Schottky diode, it was also confirmed that the phase-separated InAlAs layers showed a lower SBH value of about 250 meV than it for the normal InAlAs layers. The reduction of SBH arising from the phase separation of InAlAs layers resulted in the larger leakage current in InAlAs Schottky diodes.

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Temperature-dependent barrier height in CdSe Schottky diode

Cited by 37 publications

References 25 publications

Electrodeposited, Transverse Nanowire Electroluminescent Junctions

Electrodeposited, Transverse Nanowire Electroluminescent Junctions

Rapid, Wet Chemical Fabrication of Radial Junction Electroluminescent Wires

Phase Separation Induced Schottky Barrier Height Change in InAlAs/InP Heterostructure-based HEMT Devices

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