The annealing temperature effect on the electrical properties of boron‐doped hydrogenated amorphous silicon a‐Si:H(B)

Khelifati, N.; Tata, S.; Rahal, Achour; Cherfi, Rabah; Fedala, Abdelkrim; Kechouane, M.; Mohammed‐Brahim, Tayeb

doi:10.1002/pssc.200982718

Cited by 5 publications

(2 citation statements)

References 16 publications

(16 reference statements)

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“…[30][31][32] When a higher annealing temperature, e.g., >200 • C, is applied, the deactivated dopant may be more effectively restored. It was reported that B dopants can be activated when annealed at temperatures greater than 200 • C. 33,34 The partially restored p + p − n + solar cell in this study was further annealed at 230 • C for an hour. After the additional annealing, the V OC returned into the initial value, i.e., from 0.84 V to 0.87 V, as shown in Fig.…”

Section: Degradations Of A-si:h Solar Cells Of Different Tri-layer De...mentioning

confidence: 66%

Influence of pin Amorphous Silicon Stack Deposition Sequence on Solar Cell Performance and Degradation

Kim

Kuo

2017

ECS J. Solid State Sci. Technol.

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The performance and stress-induced degradation of a-Si:H solar cells with pin and nip stacked structures prepared in one pump down within the same chamber have been studied. The performance of the pin cell is better than that of the nip cell due to the dopant contamination of the i-layer from the previous deposition step, i.e., actually formed in the p+p−n+ and n+n−p+, separately. Deterioration of the cell under the electric-stress condition is accelerated with the simultaneous solar light illumination due to the enhanced generation of defects. The degradation of the p+p−n+ cell is much larger than that of the n+n−p+ cell due to the stronger recombination of charge carriers in the p− layer. The former is more difficult to restore to its initial stage than the latter using a thermal annealing step because of the difficult reactivation of the boron dopant. In summary, the a-Si:H tri-layer deposition sequence affects the i-layer properties, which is critical to the solar cell performance and reliability.

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Section: Degradations Of A-si:h Solar Cells Of Different Tri-layer De...mentioning

confidence: 66%

Influence of pin Amorphous Silicon Stack Deposition Sequence on Solar Cell Performance and Degradation

Kim

Kuo

2017

ECS J. Solid State Sci. Technol.

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“…The 2n d post-annealing step improves all properties of the solar cell except the rseries. The high annealing temperature activates the dopants and reduces defect densities in the films [8], [9]. However, during the annealing process, additional defects, such as dangling bonds, can be created in films [10].…”

Section: Methodsmentioning

confidence: 99%

P<sup>+</sup> layer effects on a-Si:H solar cell performance

Kim

Kuo

2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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Influences of the p + layer, i.e., deposition condition, post-deposition annealing, thin film deposition sequence, internal light reflection, electrode film quality, and SiNx chamber pretreatment on the a-Si:H solar cell performance have been studied. The conversion efficiency is improved using the pin stack structure with a high final annealing temperature and a high reflective bottom electrode due to the decrease of the contact resistance, the reduction of defects in the film, the increase of the hole transport efficiency, the improvement of light absorption, and the minimum cross contamination. The high solar cell efficiency was obtained by optimizing the p + related film process.

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