Influence of pin Amorphous Silicon Stack Deposition Sequence on Solar Cell Performance and Degradation

Kim, Ki-Bum; Kuo, Yue

doi:10.1149/2.0301701jss

Cited by 5 publications

(1 citation statement)

References 32 publications

(63 reference statements)

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“…The preparation and measurement of highly efficient a-Si:H single-junction solar cells were presented in [ 11 , 12 , 13 ], and the impact of the deposition rate on metastability was discussed in [ 14 ]. The practical applications of building integrated photovoltaic systems were presented in [ 15 , 16 , 17 , 18 , 19 , 20 ]. Moreover, in [ 21 ], plasmonic light trapping phenomena in thin-film silicon solar cells with improved self-assembled silver nanoparticles were discussed.…”

Section: Introductionmentioning

confidence: 99%

Analysis, Synthesis and Characterization of Thin Films of a-Si:H (n-type and p-type) Deposited by PECVD for Solar Cell Applications

et al. 2021

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In this paper, the analysis, synthesis and characterization of thin films of a-Si:H deposited by PECVD were carried out. Three types of films were deposited: In the first series (00 process), an intrinsic a-Si:H film was doped. In the second series (A1–A5 process), n-type samples were doped, and to carry this out, a gas mixture of silane (SiH4), dihydrogen (H2) and phosphine (PH3) was used. In the third series (B1–B5 process), p-type samples were doped using a mixture of silane (SiH4), dihydrogen (H2) and diborane (B2H6). The films’ surface morphology was characterized by atomic force microscopy (AFM), while the analysis of the films was performed by scanning electron microscopy (SEM), and UV–visible ellipsometry was used to obtain the optical band gap and film thickness. According to the results of the present study, it can be concluded that the best conditions can be obtained when the flow of dopant gases (phosphine or diborane) increases, as seen in the conductivity graphs, where the films with the highest flow of dopant gas reached the highest conductivities compared to the minimum required for materials made of a-Si:H silicon for high-quality solar cells. It can be concluded from the results that the magnitude of the conductivity, which increased by several orders, represents an important result, since we could improve the efficiency of solar cells based on a-Si:H.

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Section: Introductionmentioning

confidence: 99%

Analysis, Synthesis and Characterization of Thin Films of a-Si:H (n-type and p-type) Deposited by PECVD for Solar Cell Applications

et al. 2021

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Photovoltaic and impedance spectroscopy characterization of single-junction a-Si:H p–i–n solar cells deposited by simple shadow masking techniques using PECVD

et al. 2020

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Hydrogenated amorphous silicon p–i–n solar cells with a 1 × 1 cm2 active surface area were fabricated using shadow masks on the 20 × 20 cm2 glass substrate coated with a fluorine-doped tin oxide film. The intrinsic, n-type hydrogenated amorphous silicon (a-Si:H), and p-type a-SiC:H thin films were deposited using plasma-enhanced chemical vapor deposition at 13.56 MHz plasma excitation frequency and on 20 × 20 cm2 and SnO2:F covered glass substrates. Low rf-power densities (less than 0.1 W/cm2) and substrate temperatures (less than 190 °C) were used for this purpose. Raman spectra of the films are dominated by a broad peak around 480 cm−1 that is the characteristic of the amorphous silicon network for all the three types of films. Scanning electron microscopy measurements revealed that the surface of the a-Si:H films deposited on SnO2:F-coated glass substrates (Asahi-VU) replicates the texture of the SnO2:F film. Spectroscopic ellipsometry spectra were analyzed with the Tauc–Lorentz dispersion model, and the results revealed that the optical gap of the intrinsic a-Si:H films is on the order of 1.7 eV, while that of the a-SiC:H is on the order of 1.8 eV. These results were further confirmed by optical transmission measurements. The highest efficiency obtained for solar cells prepared with shadow masking under our condition is on the order of 8.83% with a Voc of 0.856 V, a short circuit current density of 15.6 mA/cm2, and a fill factor of 66.07%. The obtained efficiency is slightly lower than the record efficiency obtained in this family of cells (10.3%) prepared by laser scribing because the low short-circuit current slightly lowers the fill factor. Impedance spectroscopy measurements were performed on the cells in the dark in the frequency range of 1 kHz–100 kHz. The analysis of impedance either in the Nyquist diagram or in the Bode diagram suggests a lumped circuit consisting of resistance Rs in series with a parallel combination of resistance Rp and capacitance Cp that account for the p–i–n structure. The value of Rp changed with the applied DC bias. The value of the series resistance agrees with the value obtained from the current–voltage characteristics of the cell.

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Effect of phosphorus doping on the performance of pin-type a-Si:H thin-film solar cells

Son

Lee

Choi

et al. 2018

Molecular Crystals and Liquid Crystals

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Influence of pin Amorphous Silicon Stack Deposition Sequence on Solar Cell Performance and Degradation

Cited by 5 publications

References 32 publications

Analysis, Synthesis and Characterization of Thin Films of a-Si:H (n-type and p-type) Deposited by PECVD for Solar Cell Applications

Analysis, Synthesis and Characterization of Thin Films of a-Si:H (n-type and p-type) Deposited by PECVD for Solar Cell Applications

Photovoltaic and impedance spectroscopy characterization of single-junction a-Si:H p–i–n solar cells deposited by simple shadow masking techniques using PECVD

Effect of phosphorus doping on the performance of pin-type a-Si:H thin-film solar cells

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