Properties of a-Si:H films deposited by RF magnetron sputtering at 95°C

Girginoudi, D.; Tsiarapas, Christos; Georgoulas, N.

doi:10.1016/j.apsusc.2010.11.115

Cited by 14 publications

(6 citation statements)

References 14 publications

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“…1, the characteristic FTIR spectrum of samples deposited at room temperature is shown. Two bands are observed at 640 and 2090 cm −1 , corresponding to the Si-H wagging mode [12] and the Si-H 2 stretching mode, respectively, as well as the Si-H 2 bending mode in 850 cm −1 and the Si-H 2 scissor mode in 894 cm −1 [13]. The presence of only Si-H-related bonds reveals high purity film composition.…”

Section: Resultsmentioning

confidence: 93%

Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

Garcı́a¹,

Castán²,

Dueñas³

et al. 2017

Nano Online

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A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200°C were used. A rapid thermal annealing in forming gas atmosphere at 200°C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150°C) might be the best choice.

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Section: Resultsmentioning

confidence: 93%

Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

Garcı́a¹,

Castán²,

Dueñas³

et al. 2017

Nano Online

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“…[1][2][3][4] The advantage of a-Si over c-Si is in the much higher absorption coefficient enabling high absorption of solar radiation for a film thickness of the order of 1 mm compared with 200 mm for c-Si.…”

Section: Introductionmentioning

confidence: 99%

Influence of doping and microstructure on electrical properties of doped silicon thin films

Yang

et al. 2014

Materials Technology

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In this work, phosphorus and boron doped silicon films were deposited on monocrystalline silicon substrates by plasma enhanced chemical vapour deposition. Microstructure and net doping concentration were investigated using Raman spectroscopy and secondary ion mass spectrometer, and the dark conductivity, carrier concentration and mobility of the films were measured using semiconductor characterisation system. The results indicated that the structure of the films were all amorphous despite of the different doping gas flow ratios, and the dark conductivity and carrier density changed by only one order of magnitude with the increase in [PH 3 ]/[SiH 4 ] and [B 2 H 6 ]/[SiH 4 ] gas flow ratios. The best flow ratios of [PH 3 ]/[SiH 4 ] and [B 2 H 6 ]/[SiH 4 ] were obtained to be 1?5 and 1% respectively, and then the optimised samples were annealed. After annealing, the film expressed a tendency of transition to crystalline from amorphous according to the Raman results, and the dark conductivity and carrier concentration increased by two to three orders of magnitude for both doped film series. The structure has more significant influence on the electrical properties of doped silicon thin film than the doping concentration.

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“…Silicon thin films have been studied extensively as promising materials for applications in solar cells due to their natural abundance, environmental safety, potential high performance and capability of low cost production. [1][2][3][4] Plasma enhanced chemical vapour deposition (PECVD) is used widely for the preparation of silicon thin films on a large area substrate and at low substrate temperature. [5][6][7] However, it has been recognised that amorphous silicon thin films suffer light induced degradation, resulting in a reduction in the power conversion efficiency of the device.…”

Section: Introductionmentioning

confidence: 99%

Varied longitudinal microstructure of μc-Si: H films by tuning substrate temperature

Lü

Yang

2015

Surface Engineering

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Hydrogenated silicon thin films were deposited using plasma enhanced chemical vapour deposition method. The effects of substrate temperature on the microstructure and electrical properties of the films were investigated. Results show that the as received crystalline silicon thin film is a typical two-phase structure consisting of an amorphous phase and a crystalline phase. At a lower substrate temperature, the thickness of the initial amorphous incubation layer is dozens of nanometers, and few crystalline grains inset in the film after phase transition. As the substrate temperature increases, the initial incubation stage shortens to several nanometers, and the phase transition to crystalline starts earlier. After the phase transition, abundant crystallites appear, and the amorphous phase exists in the film just as the grain boundary. However, at overhigh substrate temperature, the average crystallinity and grain size of the film decrease. Deposition rate abidingly decreases with the increase in substrate temperature. The films with more ordered structure exhibit superior electrical properties.

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Properties of a-Si:H films deposited by RF magnetron sputtering at 95°C

Cited by 14 publications

References 14 publications

Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

Influence of doping and microstructure on electrical properties of doped silicon thin films

Varied longitudinal microstructure of μc-Si: H films by tuning substrate temperature

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