Abstract:A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200°C were used. A rapid thermal annealing in forming gas atmosphere at 200°C during 10 min was applied after the metallization process. The evolution of interfacial state density w… Show more
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