Textured stainless steel foil as efficient rear reflector for flexible black silicon

Omar, Halo Dalshad; Abdulkadir, Auwal; Hashim, M.R.; Pakhuruddin, Mohd Zamir

doi:10.1016/j.rinp.2021.104203

Cited by 3 publications

(3 citation statements)

References 20 publications

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“…Therefore, an optimal growth temperature of 450 °C was chosen for Si growth, which provided an acceptable antireflection. Of note, the produced b-SS/Fe 3 O 4 /Si templates reached an antireflection performance comparable with that achieved for previously reported b-Si substrates glue-bonded with textured SS [ 27 , 28 ], yet at much lower Si consumption.…”

Section: Resultssupporting

confidence: 85%

“…Thus, integration of an SS substrate with so-called black materials (e.g., black Si, Si pyramids and vertical nanowire arrays) appears to be a natural solution to achieve high PCE using low-cost supporting substrates. In this light, a very smart but unpractical example of such an integration was demonstrated by Omar et al [ 27 , 28 ] who independently produced a textured rear reflector and b-Si by wet chemistry etching of SS and Si substrates followed by glue bonding. Actually, an increase in light absorption was obtained compared with freestanding b-Si; however, there were no remarks regarding the PCE of the proposed SS/b-Si device.…”

Section: Introductionmentioning

confidence: 99%

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Textured Stainless Steel as a Platform for Black Mg2Si/Si Heterojunction Solar Cells with Advanced Photovoltaic Performance

et al. 2022

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This paper reports on a facile bottom-up method for the direct integration of a silicon (Si)-magnesium silicide (Mg2Si) heterojunction solar cell (HSC) with a textured rear reflector made of stainless steel (SS). Modified wet chemical etching and post processing of SS substrates resulted in the formation of both a rough surface texture and diffusion barrier layer, consisting of magnetite (Fe3O4) with reduced optical reflection. Then, Si, Mg2Si and CaSi2 layers were stepwise thermally evaporated onto the textured SS surface. No traces of Fe and Cr silicide phases were detected by Raman spectroscopy, confirming effective suppression of impurity diffusion from the SS to the upper layers at least at temperatures required for Si deposition, as well as Mg2Si and CaSi2 formation. The obtained black-SS/Fe3O4/Si/Mg2Si/CaSi2 sample preserved, to some extent, its underlying textured morphology and demonstrated an averaged reflection of 15% over the spectral range of 200–1800 nm, while its prototype HSC possessed a wideband photoresponse with a photoelectric conversion efficiency of 7.5% under AM1.5 illumination. Moreover, Si layers deposited alone onto a black-SS substrate demonstrated competitive antireflection properties compared with black Si (b-Si) obtained by traditional top-down etching approaches, and hybrid b-Si/textured-SS structures with a glue-bonded interlayer.

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Section: Resultssupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Textured Stainless Steel as a Platform for Black Mg2Si/Si Heterojunction Solar Cells with Advanced Photovoltaic Performance

et al. 2022

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“…The wafers are then rinsed using DI H 2 O and dried using nitrogen. To fabricate flexible bSi by one-step MCCE process, silver nanoparticles (Ag NPs) are deposited on the wafers from solution of AgNO 3 :HF:DI H 2 O, in a volumetric ratio of 7:9:34 ml at room temperature for 20 min, followed by a simultaneous etching process (Abouda-Lachiheb et al , 2012; Omar et al , 2021). After the MCCE process, the residuals of Ag catalyst on the surface are removed by etching with HNO 3 (60%) at room temperature.…”

Section: Methodsmentioning

confidence: 99%

Polyimide substrate textured by copper-seeding technique for enhanced light absorption in flexible black silicon

Omar

Abdulkadir

Hashim

et al. 2022

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Purpose This paper aims to present investigation on textured polyimide (PI) substrate for enhanced light absorption in flexible black silicon (bSi). Design/methodology/approach Flexible bSi with thickness of 60 µm is used in this work. To texture the PI substrate, copper-seeding technique is used. A copper (Cu) layer with a thickness of 100 nm is deposited on PI substrate by sputtering. The substrate is then annealed at 400°C in air ambient for different durations of 60, 90 and 120 min. Findings With 90 min of annealing, root mean square roughness as large as 130 nm, peak angle of 24° and angle distribution of up to 87° are obtained. With this texturing condition, the flexible bSi exhibits maximum potential short-circuit current density (Jmax) of 40.33 mA/cm2, or 0.45 mA/cm2 higher compared to the flexible bSi on planar PI. The improvement is attributed to enhanced light scattering at the flexible bSi/textured PI interface. The findings from this work demonstrate that the optimization of the PI texturing via Cu-seeding process leads to an enhancement in the long wavelengths light absorption and potential Jmax in the flexible bSi absorber. Originality/value Demonstrated enhanced light absorption and potential Jmax in flexible bSi on textured PI substrate (compared to planar PI substrate) by Cu-seeding with different annealing durations.

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Effect of deposition time toward surface morphological and optical properties of silicon dioxide thin films on black silicon by liquid-phase deposition

2022

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Textured stainless steel foil as efficient rear reflector for flexible black silicon

Cited by 3 publications

References 20 publications

Textured Stainless Steel as a Platform for Black Mg2Si/Si Heterojunction Solar Cells with Advanced Photovoltaic Performance

Textured Stainless Steel as a Platform for Black Mg2Si/Si Heterojunction Solar Cells with Advanced Photovoltaic Performance

Polyimide substrate textured by copper-seeding technique for enhanced light absorption in flexible black silicon

Effect of deposition time toward surface morphological and optical properties of silicon dioxide thin films on black silicon by liquid-phase deposition

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