Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition

Erlacher, A.; Комарова, Е. В.; Jaeger, Herbert; Haugan, H. J.; Brown, Gail J.

doi:10.1016/j.jnoncrysol.2005.10.025

Cited by 12 publications

(6 citation statements)

References 12 publications

(15 reference statements)

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“…On the other hand, AFM images may not have the capability to reveal crystalline film substructures, which may cause the discrepancy found. We observed a similar difference in grain size as determined from x-ray data and AFM for low-temperature PLD GaAs on glass as well [25].…”

supporting

confidence: 77%

CdS thin films formed on flexible plastic substrates by pulsed-laser deposition

Acharya

Skuza

Lukaszew

et al. 2007

J. Phys.: Condens. Matter

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The merger of a transparent plastic foil substrate with a semiconductor CdS film for a photonic application was realized using pulsed-laser deposition. Although plastic is not considered to be a favoured substrate material for semiconductor thin-film formation, the deposited CdS film possesses good adhesion, with a polycrystalline texture, flat surface (roughness/thickness = 0.003), and room-temperature photosensitivity with a blue-shifted peak at 2.54 eV. This work demonstrates the capability of pulsed-laser deposition to form novel heterostructures with appealing and useful technological properties such as plasticity and low weight.

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supporting

confidence: 77%

CdS thin films formed on flexible plastic substrates by pulsed-laser deposition

Acharya

Skuza

Lukaszew

et al. 2007

J. Phys.: Condens. Matter

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“…The measurement has been carried out at room temperature in Van der Pauw geometry with In contacts employing a magnetic field of 1.5 T. The result reveals that the deposited GaAs film is indeed p-type but with extremely low acceptor concentration and mobility, approximately 10 13 cm −3 and 6 cm 2 V −1 s −1 , respectively. The low mobility, which is well below the GaAs bulk value of 400 cm 2 V −1 s −1 for holes, explains the intrinsic serial load of the samples revealed in figure 1 and confirms our conclusions in [11] that PLD GaAs is of multi-phase nature including crystalline but also amorphous parts, which hamper carrier transport.…”

supporting

confidence: 87%

Electronic properties of p-GaAs deposited on n-Si with pulsed-laser deposition

Erlacher

Smith

Mitchel

et al. 2008

J. Phys.: Condens. Matter

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By means of nanosecond laser pulses at 355, 532, and 1064 nm, p(Zn)-type GaAs was ablated and deposited on n-type Si. The samples showed rectification and Hall measurements established that the deposited material was p-type, but the active-doping concentration was six orders of magnitude below the target value. Because secondary-ion mass spectroscopy results indicated stoichiometric material transfer, we concluded that most of the Zn atoms do not act as acceptors because of the amorphous film texture. The work further showed indications that pulsed-laser deposition at 355 nm causes enhanced Si diffusion into the deposited film, compared to the ablations done at 532 and 1064 nm.

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“…Still it is not completely clear whether this is a result of material transport directly from the target instead of deposition from plasma or it can be ascribed to some irregularities in the deposition from the plasma itself, but this has been noted also before [12]. Nevertheless, the size of these agglomerates is typically above a few m and therefore they could not be detected in our selected GISAXS range.…”

Section: Resultsmentioning

confidence: 88%

Texture of GaAs Nanoparticles Deposited by Pulsed Laser Ablation in Different Atmospheres

et al. 2013

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This work analyzes the effect of nanosecond laser pulse deposition of GaAs in an inert atmosphere of Ar and He. The number of pulses and the gas pressure were varied and the effect on the nanoparticles formation was studied by scanning electron microscopy, grazing incidence small angle X-ray scattering, and atomic force microscopy. It is shown that the GaAs nanoparticle sizes and size distributions can be controlled partly by the number of laser pulses applied during their production and partly by the choice of inert gas and its pressure. Our results suggest that He is a more promising working gas producing narrower size distributions and a better size control of the grown nanoparticles.

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Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition

Cited by 12 publications

References 12 publications

CdS thin films formed on flexible plastic substrates by pulsed-laser deposition

CdS thin films formed on flexible plastic substrates by pulsed-laser deposition

Electronic properties of p-GaAs deposited on n-Si with pulsed-laser deposition

Texture of GaAs Nanoparticles Deposited by Pulsed Laser Ablation in Different Atmospheres

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