“…In the last years, the deposition of SiO x thin film has been widely investigated by using many different plasma jet devices and organosilicon precursors (e.g., hexamethyldisiloxane, tetraethoxysilane, octamethylcyclotetrasiloxane, and tetrakis(trimethylsilyloxy)silane) [30,95,164,165,172,181,208,209]. Growth rates as high as 60 μm•min -1 have been reported for smooth SiO x coatings by using the low temperature arc jet of Fig.…”