2017
DOI: 10.1016/j.surfcoat.2017.05.027
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Atmospheric pressure non-equilibrium plasma jet technology: general features, specificities and applications in surface processing of materials

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Cited by 150 publications
(128 citation statements)
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References 234 publications
(659 reference statements)
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“…We investigated and optimized the experimental conditions of processes carried out using DBDs fed with: i)pure helium (i.e., the DBD process main gas), as representative of plasma treatment; ii)helium/1% oxygen (He/O 2 ) mixture, that could induce considerable enzyme etching; iii)helium/ethylene mixtures to obtain PE‐CVD and overcoat the enzyme with a polyethylene‐like thin film.…”
Section: Resultsmentioning
confidence: 99%
“…We investigated and optimized the experimental conditions of processes carried out using DBDs fed with: i)pure helium (i.e., the DBD process main gas), as representative of plasma treatment; ii)helium/1% oxygen (He/O 2 ) mixture, that could induce considerable enzyme etching; iii)helium/ethylene mixtures to obtain PE‐CVD and overcoat the enzyme with a polyethylene‐like thin film.…”
Section: Resultsmentioning
confidence: 99%
“…An afterglow region over a few centimeters, namely the post-discha rg e, as indicated Fig. 1, is created at the outlet of the nozzle, which is directed toward the sample [15]. The post-discharge contains reactive species such as metastables, neutrals, and radicals, but not ionized species [9,16].…”
Section: Atmospheric Pressure Plasma Setupmentioning
confidence: 99%
“…In addition, in our early work [53], Ar plasma offered an acceptable antibacterial activity for removal of E. coli due to remarkable increment in the surface roughness (RMS) of Ag thin film with thickness of 120 nm (about 9 nm) compared to He plasma. Surface modification by nonequilibrium plasmas at atmospheric pressure can be accomplished by using two different approaches, i.e., the "direct (touch mode)" and the "remote (non-touch mode)" approach [29,59]. The plasma treatment employed in this research is based on the direct mode, where the substrate is located in the plasma generation region and is directly exposed to the plasma plume.…”
Section: Details Of Plasma Processing For Perpendicular Appjmentioning
confidence: 99%