Terahertz response of quantum point contacts

Song, Jiheon; Kabir, N.; Kawano, Yukio; Ishibashi, Koji; Aǐzin, G. R.; Mourokh, Lev G.; Reno, John L.; Markelz, Andrea; Bird, J. P.

doi:10.1063/1.2938416

Cited by 29 publications

(20 citation statements)

References 20 publications

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“…The observation of such bolometric responses, especially at ultrahigh frequencies, is a highly prized characteristic for a variety of device applications. Similarly, such a response has been observed for GaAs [4], which confirms the bolometric behavior observed in the GR-FET device, even at ambient conditions.…”

Section: Resultssupporting

confidence: 84%

“…Following a previous study in semiconductor QD THz sensing [4], a basic frequency characteristic has already been defined using a conventional microwave transconductance measurement [5]. Building on these findings, this experiment presents a systematic study which explored the GHz/THz detection limit of both bilayer and single-layer GR-FETs.…”

Section: Discussionmentioning

confidence: 95%

“…This is in marked contrast to conventional semiconductors whose band gaps appear several orders of magnitude larger. For these reasons, graphene field-effect transistors (GR-FETs) have the potential to exceed the detection limit of most existing semiconductor quantum point contacts [3,4]. This is due to the unique phase-coherent length of open quantum dot structures that can be formed in bilayer graphene when exposed to GHz/THz radiation [5].…”

Section: Introductionmentioning

confidence: 99%

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GR-FET application for high-frequency detection device

et al. 2013

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A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.

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Section: Resultssupporting

confidence: 84%

Section: Discussionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

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GR-FET application for high-frequency detection device

et al. 2013

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“…Отклик структур с КТК на облучение с частотой 0,1 ≤ f ≤ 2,5 ТГц ранее экспериментально исследовался во многих работах [17][18][19][20][21], но измерения ограничивались главным образом открытым режимом прохождения 2 G e h  и ориентацией терагерцового поля поперек тока. О наблюдении фотонных ступенек при этом не сообщалось.…”

Section:  unclassified

Electron Transmission through a Smooth Tunnel Barrier in High-Frequency Field

Ткаченко¹,

Ткаченко²,

Baksheyev³

2018

SJP

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Численно изучено фотонно-ассистированное прохождение электрона через одномерный плавный барьер, моделирующий потенциал в нижней энергетической подзоне квантового точечного контакта. Показано, что на зависимостях коэффициента прохождения от энергии присутствуют плечеобразные особенности, которые на частотных зависимостях трансформируются в максимумы. Особенности вызваны переходами в канал с энергией, близкой к вершине барьера, при поглощении одного, двух или трех фотонов, и их положение не зависит от амплитуды высокочастотного поля. С понижением частоты фотон-индуцированные ступени исчезают, но в производной коэффициента прохождения от энергии остаются два пика, равноотстоящие по энергии от средней высоты барьера на амплитуду колебаний высоты барьера. Найденные особенности предлагается наблюдать экспериментально при облучении полупроводниковой структуры с квантовым точечным контактом на частотах 0,01-1,7 ТГц. Ключевые слова туннелирование, надбарьерное прохождение, квантовый точечный контакт, ступень кондактанса, микроволны, терагерцы, низкочастотные особенности, фотонно-ассистированное прохождение Благодарности Работа поддержана проектом РНФ № 14-22-00143. Мы признательны З. Д. Квону и С. Д. Ганичеву за стимулирующие обсуждения Для цитирования Ткаченко О. А., Ткаченко В. А., Бакшеев Д. Г. Прохождение электрона через туннельный плавный барьер в высокочастотном поле // Сибирский физический журнал. 2018. Т. 13, № 4. С. 74-90.

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“…The plasma oscillations decay in a way that either charge polarization is induced in the QD or even charge is excited out of the QD. Polarization of the charge density in the 2DEG is used in plasmonic detectors [4,[21][22][23]. In our experiment, we consider the second mechanism-charge excitation of the QD.…”

Section: B Quantum-dot Detectormentioning

confidence: 99%

Detection of Coherent Terahertz Radiation from a High-Temperature Superconductor Josephson Junction by a Semiconductor Quantum-Dot Detector

et al. 2016

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We examine the application of Josephson radiation emitters to spectral calibration of single-photonresolving detectors. Josephson junctions are patterned in a YBCO film on a bicrystal sapphire substrate and are voltage controlled to generate radiation in the frequency range of 0.05-1 THz. The detector used in this work consists of a gate-defined quantum-dot photon-to-charge transducer coupled to a single-electron transistor. Both the emitter and the detector are equipped with a matching on-chip wide-band antenna. The combination of a tuneable emitter and detector allows us to determine the efficacy of the YBCO emitter and also to analyze the elementary processes involved in the detection.

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Terahertz response of quantum point contacts

Cited by 29 publications

References 20 publications

GR-FET application for high-frequency detection device

GR-FET application for high-frequency detection device

Electron Transmission through a Smooth Tunnel Barrier in High-Frequency Field

Detection of Coherent Terahertz Radiation from a High-Temperature Superconductor Josephson Junction by a Semiconductor Quantum-Dot Detector

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