GR-FET application for high-frequency detection device

Abstract

A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.

Ultra‐Flexible Biodegradable Pressure Sensitive Field Effect Transistors for Hands‐Free Control of Robot Movements

“…The obtained ON/OFF ratio in our proposed device S4 was higher than that reported in works. [12,13,15] However, the GFNs show increased resistivity and reduced mobility due to the diffusive transport of charge carriers along and across the curved (strained) regions. [76] The ON/OFF ratio was reduced for GO concentration >0.5 wt%, as observed for samples S5 and S6.…”

“…As a result, their application was restricted to the FET-based sensors. [12][13][14][15] This could be addressed through the utilization of nanostructured crumpled GFN as the channel material. [16] The nanocorrugations in GFN morphology produce a bandgap (800 meV) opening in its electronic structure.…”