Terahertz bolometric detection by thermal noise in graphene field effect transistor

Mahjoub, Akram M.; Suzuki, Shinichi; Ouchi, Takahiro; Aoki, Nobuyuki; Miyamoto, Katsuhiko; Yamaguchi, Tomohiro; Omatsu, Takashige; Ishibashi, Koji; Ochiai, Y.

doi:10.1063/1.4929768

Cited by 5 publications

(3 citation statements)

References 37 publications

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“…When illuminated, the resistance change at 1 V is 83.3 Ω. It is well known that the presence of electrical power can heat up graphene through Joule heating, [21,22,31,32] which is measured to be 3.5 K per kW•cm −2 . [32] The calculated Joule heating T as a function of bias voltage V b is plotted in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Particularly, owing to its extremely high mobility for both electrons and holes [9] and its uniform light absorption coefficient (∼2.3%) over a wide range of spectrum from ultraviolet to infrared, [10,11] different kinds of graphene-based photodetectors have been designed and fabricated. [12][13][14][15][16][17][18][19][20][21][22][23][24][25] The field-effect-transistor-structure graphene photodetectors are the most common ones. [12][13][14] However, since the photo-generated electrons and holes can be separated only in the vicinity of the metal leads (∼ 200 nm), its photoresponsivity is rather low, only a few milliamps per watt.…”

Section: Introductionmentioning

confidence: 99%

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Bolometric effect in a waveguide-integrated graphene photodetector

et al. 2016

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Graphene is an alternative material for photodetectors owing to its unique properties. These include its uniform absorption of light from ultraviolet to infrared and its ultrahigh mobility for both electrons and holes. Unfortunately, due to the low absorption of light, the photoresponsivity of graphene-based photodetectors is usually low, only a few milliamps per watt. In this letter, we fabricate a waveguide-integrated graphene photodetector. A photoresponsivity exceeding 0.11 A•W −1 is obtained which enables most optoelectronic applications. The dominating mechanism of photoresponse is investigated and is attributed to the photo-induced bolometric effect. Theoretical calculation shows that the bolometric photoresponsivity is 4.6 A•W −1 . The absorption coefficient of the device is estimated to be 0.27 dB•µm −1 .

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Bolometric effect in a waveguide-integrated graphene photodetector

et al. 2016

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“…The bolometer detector is mainly made of semiconductor or superconductor absorbing material and is widely used in the submillimeter wave (THz) band [66][67][68]. It is one of the most sensitive detectors.…”

Section: Photobolometric (Pb) Effectmentioning

confidence: 99%

Mechanism, Material, Design, and Implementation Principle of Two-Dimensional Material Photodetectors

et al. 2021

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Two-dimensional (2D) materials may play an important role in future photodetectors due to their natural atom-thin body thickness, unique quantum confinement, and excellent electronic and photoelectric properties. Semimetallic graphene, semiconductor black phosphorus, and transition metal dichalcogenides possess flexible and adjustable bandgaps, which correspond to a wide interaction spectrum ranging from ultraviolet to terahertz. Nevertheless, their absorbance is relatively low, and it is difficult for a single material to cover a wide spectrum. Therefore, the combination of phototransistors based on 2D hybrid structures with other material platforms, such as quantum dots, organic materials, or plasma nanostructures, exhibit ultra-sensitive and broadband optical detection capabilities that cannot be ascribed to the individual constituents of the assembly. This article provides a comprehensive and systematic review of the recent research progress of 2D material photodetectors. First, the fundamental detection mechanism and key metrics of the 2D material photodetectors are introduced. Then, the latest developments in 2D material photodetectors are reviewed based on the strategies of photocurrent enhancement. Finally, a design and implementation principle for high-performance 2D material photodetectors is provided, together with the current challenges and future outlooks.

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Two‐Dimensional Semiconductors for Photodetection

Sun¹,

Yang²,

Yao³

et al. 2022

Digital Encyclopedia of Applied Physics

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Since the discovery of graphene, two‐dimensional (2D) semiconductors have attracted intensive interest due to their unique properties. In particular, 2D semiconductors possess unique physics and superior performance for light–matter interactions in a comparison with three‐dimensional (3D) bulk counterparts. In this article, the general electronic and optoelectronic properties of 2D semiconductors will be firstly introduced. Then the technical approaches for tuning their electronic properties including both energy bandgap engineering and doping will be presented. Electrical contacts of 2D semiconductor devices as another technical challenge will also be discussed. Finally, the application of 2D semiconductors in photodetectors, including both the light–matter interaction mechanisms and the metric benchmarking of recent advances will be summarized.

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Terahertz bolometric detection by thermal noise in graphene field effect transistor

Cited by 5 publications

References 37 publications

Bolometric effect in a waveguide-integrated graphene photodetector

Bolometric effect in a waveguide-integrated graphene photodetector

Mechanism, Material, Design, and Implementation Principle of Two-Dimensional Material Photodetectors

Two‐Dimensional Semiconductors for Photodetection

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