Bolometric effect in a waveguide-integrated graphene photodetector

Wang, Yubing; Yin, Wen; Han, Qin; Yang, Xuezhi; Han, Yuanfei; Lv, Qianqian; Yin, Dongmei

doi:10.1088/1674-1056/25/11/118103

Cited by 21 publications

(14 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The resistance of the material may change with temperature induced due to light irradiation and absorption, resulting in a change in the current, giving rise to a photobolometric effect [51,52]. The current of the device can increase or decrease with the PB effect for a fixed external bias.…”

Section: Photobolometric (Pb) Effectmentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

View full text Add to dashboard Cite

Transition metal dichalcogenides (TMDCs) are a family of two-dimensional layered materials (2DLMs) with extraordinary optical properties. They present an attractive option for future multifunctional and high-performance optoelectronics. However, much remains to be done to realize a mature technology for commercial applications. In this review article, we describe the progress and scope of TMDC devices in optical and photonic applications. Various photoresponse mechanisms observed in such devices and a brief discussion on measurement and analysis methods are described. Three main types of optoelectronic devices, namely photodetectors, photovoltaics and lightemitting devices are discussed in detail with a focus on device architecture and operation. Examples showing experimental integration of 2DLM-based devices with silicon photonics are also discussed briefly. A wide range of data for key performance metrics is analysed with insights into future directions for device design, processing and characterization that can help overcome present gaps and challenges. While the field is still in its infancy and requires significant efforts toward standardizing various approaches towards a mature technology, it has already shown promising results in broader aspects of compatibility, integration and performance for future electronics. Sensors are increasingly becoming an integrated part of the global electronic eco-system with the rise of data-driven technologies. There is a growing need for networks of cost-effective, robust and reliable sensors and their integration with present technologies. Optoelectronic and photonic devices are of importance for both sensing as well as high-speed optical communication applications. 2DLMs demonstrate significant light-matter interaction that is tunable with external physical and electronic parameters such as pressure, strain, electric and magnetic field [1-6]. Moreover, 2DLMs show strong dependence of their band structure on thickness with a transition to direct bandgap in monolayers in most of the known 2DLMs [7][8][9]. Graphene has been the most studied material since its discovery in 2004 [10][11][12]. Apart from graphene, there are nearly 1500 possible 2DLMs with a wide range of material properties as predicted by first principle simulations [13]. Transition metal dichalcogenides (TMDCs) are a family of 2DLMs in the form of MX 2 compounds, where M is a transition metal (Mo, W, Re) and X is a chalcogen (S, Se, Te). TMDCs are promising for electronic applications due to their semiconducting behaviour as opposed to semi-metallic graphene, and better thermal stability than materials such as black phosphorus and silicene [14][15][16][17][18][19]. Optoelectronic devices based on TMDCsTMDCs have been the most studied 2DLMs, apart from graphene and black phosphorus, for electronic and optoelectronic device applications [20,21]. They have a sizeable bandgap in the visible and near infrared (NIR) range (∼1-2 eV) that is optimal for optoelectronic sensors and light-emitting sources for short-ran...

show abstract

Section: Photobolometric (Pb) Effectmentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

View full text Add to dashboard Cite

show abstract

“…The values of the GP-detector responsivity demonstrated in Fig. 3 are of the same order of magnitude or can exceed the room temperature responsivity of the proposed and realized THz photodetectors based on different heterostructures [21,[48][49][50][51][52][53][54][55][56][57][58][59], including those based on the P-channel [7,60,61] (although in G-based devices at very low temperatures much higher responsivities have been achieved [20]).…”

Section: A General Commentsmentioning

confidence: 99%

Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures

Ryzhii

Пономарев

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

We consider the effect of terahertz (THz) radiation on the conductivity of the ungated and gated graphene (G)-phosphorene (P) hybrid structures and propose and evaluated the hotcarrier uncooled bolometric photodetectors based on the GP-lateral diodes (GP-LDs) and GP-field-effect transistors (GP-FETs) with the GP channel. The operation of the GP-LDs and GP-FET photodetectors is associated with the carrier heating by the incident radiation absorbed in the G-layer due to the intraband transitions. The carrier heating leads to the relocation of a significant fraction of the carriers into the P-layer. Due to a relatively low mobility of the carriers in the P-layer, their main role is associated with a substantial reinforcement of the scattering of the carriers. The GP-FET bolometric photodetector characteristics are effectively controlled by the gate voltage. A strong negative conductivity of the GP-channel can provide much higher responsivity of the THz hot-carriers GP-LD and GP-FET bolometric photodetectors in comparison with the bolometers with solely the G-channels.

show abstract

“…Integrating 2D materials on optical waveguides not only helps improve the photodetection responsivity of 2D materials compared with the device configurations with normally incident light but also brings us significant advances in the development of on-chip optoelectronic systems. According to previous studies, several photodetection mechanisms, such as the photovoltaic (PV) effect [169], photothermoelectric (PTE) effect [170], and bolometric (BOL) effect [171], have been proposed to explain photo-electron conversion processes in waveguide-integrated 2D-material photodetectors. As for the PV effect, photocurrents generate from electron-hole pairs driven by built-in or applied electric fields.…”

Section: On-chip 2d-materials Photodetectorsmentioning

confidence: 99%

Integrated optoelectronics with two-dimensional materials

Cheng¹,

Guo²,

Wang³

et al. 2022

NSO

View full text Add to dashboard Cite

As we enter the post-Moore era, heterogeneous optoelectronic integrated circuits (OEICs) are attracting significant attention as an alternative approach to scaling to smaller-sized transistors. Two-dimensional (2D) materials, offering a range of intriguing optoelectronic properties as semiconductors, semimetals, and insulators, provide great potential for developing nextgeneration heterogeneous OEICs. For instance, Fermi levels of 2D materials can be tuned by applying electrical voltages, while their atomically thin geometries are inherently suited for the fabrication of planar devices without suffering from lattice mismatch. Since the first graphene-on-silicon OEICs were demonstrated in 2011, 2D-material heterogeneous OEICs have significantly progressed. To date, researchers have a better understanding of the importance of interface states on the optical properties of chip-integrated 2D materials. Moreover, there has been impressive progress towards the use of 2D materials for waveguide-integrated lasers, modulators, and photodetectors. In this review, we summarize the history, status, and trend of integrated optoelectronics with 2D materials.

show abstract

Bolometric effect in a waveguide-integrated graphene photodetector

Cited by 21 publications

References 32 publications

Optoelectronic and photonic devices based on transition metal dichalcogenides

Optoelectronic and photonic devices based on transition metal dichalcogenides

Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures

Integrated optoelectronics with two-dimensional materials

Contact Info

Product

Resources

About