The far-infrared region (wavelengths in the range 10 microm-1 mm) is one of the richest areas of spectroscopic research, encompassing the rotational spectra of molecules and vibrational spectra of solids, liquids and gases. But studies in this spectral region are hampered by the absence of sensitive detectors--despite recent efforts to improve superconducting bolometers, attainable sensitivities are currently far below the level of single-photon detection. This is in marked contrast to the visible and near-infrared regions (wavelengths shorter than about 1.5 microm), in which single-photon counting is possible using photomultiplier tubes. Here we report the detection of single far-infrared photons in the wavelength range 175-210 microm (6.0-7.1 meV), using a single-electron transistor consisting of a semiconductor quantum dot in high magnetic field. We detect, with a time resolution of a millisecond, an incident flux of 0.1 photons per second on an effective detector area of 0.1 mm2--a sensitivity that exceeds previously reported values by a factor of more than 10(4). The sensitivity is a consequence of the unconventional detection mechanism, in which one absorbed photon leads to a current of 10(6)-10(12) electrons through the quantum dot. By contrast, mechanisms of conventional detectors or photon assisted tunnelling in single-electron transistors produce only a few electrons per incident photon.

The performance of a great variety of electronic devices-ranging from semiconductor transistors to superconducting qubits-is hampered by low-frequency noise with spectra proportional to 1/f. The ubiquity and negative impact of 1/f noise has motivated intensive research into its cause, and it is now believed to originate from a bath of fluctuating two-level defect states (TLSs) embedded in the material. This phenomenon is commonly described by the long-established standard tunnelling model (STM) of independent TLS. A key prediction of STM is that the noise should vanish at low temperatures. Here we report measurements on superconducting microresonators over previously unattainable, very long time scales that show an increase in 1/f noise at low temperatures and low microwave power, contrary to the STM. We propose a new generalised tunnelling model that includes significant interaction between multiple TLSs, which fully describes these observations, as well as recent studies of individual TLS lifetimes in superconducting qubits.

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The electronic structure and numerous magnetic properties of MnBi magnetic systems are investigated using local spin density approximation (LSDA) with on-cite Coulomb correlations (LSDA+U ) included. We show that the inclusion of Coulomb correlations provides a much better description of equilibrium magnetic moments on Mn atom as well as the magnetic anisotropy energy (MAE) behavior with temperature and magneto-optical effects. We found that the inversion of the anisotropic pairwise exchange interaction between Bi atoms is responsible for the observed spin reorientation transition at 90 K. This interaction appears as a result of strong spin orbit coupling on Bi atoms, large magnetic moments on Mn atoms, significant p − d hybridization between Mn and Bi atoms, and it depends strongly on lattice constants. A better agreement with the magneto-optical Kerr measurements at higher energies is obtained. We also present the detailed investigation of the Fermi surface, the de Haas-van Alphen (dHvA) effect and the X-ray magnetic circular dichroism in MnBi.

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Single-photon counting at microwave frequencies around 500 GHz is demonstrated by using a single-electron transistor (SET) formed by two capacitively coupled GaAs/AlxGa1−xAs parallel quantum dots (QDs). A point contact separating the double QDs allows the prompt escape of an excited electron from one of the QDs to another. The resulting long-lived photoinduced ionization of the QD is detected as a change in the SET current.