Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions

Ziebell, Mélissa; Marris‐Morini, Delphine; Rasigade, G.; Crozat, P.; Fédéli, Jean-Marc; Grosse, Philippe; Cassan, Éric; Vivien, Laurent

doi:10.1364/oe.19.014690

Cited by 52 publications

(31 citation statements)

References 13 publications

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“…The first of such devices was proposed in 2009 by Li et al [44]. Recently there has also been some experimental demonstrations of modulation from interleaved devices as summarised in Table 3 [31,[45][46][47].…”

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confidence: 99%

Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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Abstract:The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission links.

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confidence: 99%

Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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“…Such modulators are typically designed with the depletion area parallel to the waveguide (lateral diode design). Modulators with junctions perpendicular to the waveguide (interdigitated diode design) have been proposed to increase the modulation efficiency and extinction ratio, however so far they required high voltage swings V pp , incompatible with CMOS [5]. We have fabricated and compared the performance of two identical ring modulators, differing only in the diode design [6].…”

Section: Low-loss Low-voltage Silicon Electro-optic Ring Modulatorsmentioning

confidence: 99%

Silicon-Photonics Devices for Low-Power, High-Bandwidth Optical I/O

Campenhout

Pantouvaki

Verheyen

et al. 2012

Advanced Photonics Congress

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Electro-optic transceivers integrated in silicon-photonics interposers are attractive for realizing low-power high-bandwidth Optical I/O for future advanced logic and memory. We review recent results obtained at imec on low-voltage silicon ring modulators and Ge photodetectors. Obtaining such power efficiencies and bandwidth densities within the voltage constraints of advanced CMOS circuits will require the adoption of the best-in-class silicon optical devices, combining low-loss optical channels with high modulation and photodetection efficiencies at low applied voltages. Although monolithic integration of photonics into the CMOS flow would arguably enable the highest integration density and best power efficiencies, co-integration of high-performance silicon optical devices becomes increasingly more challenging in advanced CMOS nodes, and it is not clear if sufficient compound yield can be obtained at low cost. An attractive alternative for silicon-based Optical I/O involves the 3-D flip-chip assembly through microbumping [2] of a silicon-photonics interposer with the CMOS logic die and/or DRAM stack, as shown in Fig. 1. Microbumping enables tight, hybrid integration of know-good dies fabricated with distinct optimized technologies within a single package, with low electrical parasitics. The potential of tight-pitch microbumping for realizing silicon optical transceivers with sub-pJ/bit energy efficiency using has already been demonstrated in [3]. In this paper, we review the recent progress at imec on low-voltage, low-loss silicon ring modulators and Ge waveguide photodetectors and their co-integration on a silicon-on-insulator wafer for realizing a high-performance silicon-photonics interposer, as a first step to toward a competitive 3-D Optical I/O technology. Low-loss, low-voltage silicon electro-optic ring modulatorsSilicon ring optical modulators are attracting increasing interest for low energy, small footprint optical interconnects co-integrated with CMOS electronics. Key requirements for such devices are high extinction ratio (ER~10dB), low insertion loss (IL<1dB), high modulation speed (>10Gb/s) and low energy per bit (<50fJ/bit). Recently, 10 Gb/s and 25 Gb/s optical modulation has been reported in carrier-depletion ring modulators using a 1 V peak-to-peak driving voltage (V pp ) [4]. However, the obtained extinction ratios were limited to 5dB for insertion losses lower than 3dB. Such modulators are typically designed with the depletion area parallel to the waveguide (lateral diode design). Modulators with junctions perpendicular to the waveguide (interdigitated diode design) have been proposed to

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“…However, for shorter distances, such as connections to or even within electronic chips, the transmitter power consumption has to be reduced towards 10's of fJ/bit [15], while silicon Mach Zehnder modulators exhibit energy consumption of a few pJ/bit. The use of ring resonators as interferometers can reduce the power consumption by typically one order of magnitude [16], but at the cost of a dramatic reduction of the optical bandwidth, typically lower than 0.1 nm. In consequence a temperature stabilization is required leading to extra power consumption.…”

Section: Introductionmentioning

confidence: 99%

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Marris‐Morini¹,

Chaisakul²,

Rouifed³

et al. 2013

Nanophotonics

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Despite being an indirect bandgap material, germanium (Ge) recently appeared as a material of choice for low power consumption optical link on silicon. Thanks to a low energy difference between direct and indirect energy bandgap, optical transitions around the direct gap can be used to achieve strong electroabsorption or photodetection in a material already used in microelectronics circuits. However, many challenges have to be addressed such as the growth of germanium-rich structures on silicon or the modeling of these structures around both direct and indirect bandgaps. This paper will explore recent achievements in Ge/SiGe quantum wells structures. Quantum confined Stark effect has been studied for different quantum well designs and light polarization. Both absorption and phase variations have been characterized and will be reported. Carrier recombination processes is also an intense research topic, in order to evaluate the competition between direct and indirect band gap emission as a function of temperature. Main results and conclusion will be introduced. Finally, high performance photonic devices (modulator and photodetector) that have already been demonstrated will be presented. At the end the challenges faced by Ge/SiGe QW as a new photonic platform will be presented.

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Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions

Cited by 52 publications

References 13 publications

Recent breakthroughs in carrier depletion based silicon optical modulators

Recent breakthroughs in carrier depletion based silicon optical modulators

Silicon-Photonics Devices for Low-Power, High-Bandwidth Optical I/O

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

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