Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between 2.75 mu m 5.5 mu m as well as at 1.55 mu m have been measured. It was found that at all wavelengths multi-photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid-infrared that require strong nonlinear response, such as for the generation of a supercontinuum

We present the demonstration of an integrated frequency modulated continuous wave LiDAR on a silicon platform. The waveform calibration, the scanning system, and the balanced detectors are implemented on a chip. Detection and ranging of a moving hard target at upto 60 m with less than 5 mW of output power is demonstrated in this paper. Index Terms-Coherent LiDAR, frequency modulated continuous wave LiDAR, laser range finder, optical sensing and sensors, photonic integrated circuits. Patrick Feneyrou received the Ph.D. degree in nonlinear spectroscopy. Since 1998, he is with the Thales Research and Technology, Palaiseau, France. Since 2003, he is in charge of the theoretical analysis, system simulation, and development of proof of concept of LiDAR systems. He has developed several LiDAR systems for laser anemometry, temperature sensing, range finding, and velocimetry. Jérôme Bourderionnet received the Ph.D. degree in laser physics. Since 2001, he has been working with the

We present a comparison of integrated heaters for silicon photonics, based on doped silicon, silicide and tungsten metallization, with and without trenches and undercut for insulation. Results show similar thermo-optic efficiency, but with electrical resistivities spanning 2 orders of magnitude.

We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, surface leakage current and bulk leakage current were separated, and their activation energies were extracted. Surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and (reverse bias) voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling.