Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Nilsson, Henrik; Caroff, Philippe; Thelander, Claes; Lind, Erik; Karlström, Olov; Wernersson, Lars‐Erik

doi:10.1063/1.3402760

Cited by 76 publications

(83 citation statements)

References 20 publications

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“…As nonintentionally doped InAs nanowires have a large background carrier concentration due to carbon incorporation, 12 the shift cannot be related to thermal activation of carriers across the band gap. A similar observation is also reported in the InAs and InSb MOSFET structures 13 and may after a more detailed analysis be attributed to thermal activation at the interface or within the dielectrics.…”

Section: A Determination Of Threshold Voltagessupporting

confidence: 59%

Doping Incorporation in InAs nanowires characterized by capacitance measurements

Astromskas

Storm

Karlström

et al. 2010

Journal of Applied Physics

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Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2×1018 to 1×1019 cm−3, while the surface charge density exceeds 5×1012 cm−2 and is shown to increase with higher dopant precursor molar fraction.

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Section: A Determination Of Threshold Voltagessupporting

confidence: 59%

Doping Incorporation in InAs nanowires characterized by capacitance measurements

Astromskas

Storm

Karlström

et al. 2010

Journal of Applied Physics

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“…Bulk InP has a large direct band gap (1.34 eV) and excellent optical properties, and has been widely used in high-power electronics and highperformance optoelectronics. Owing to these excellent material characteristics and their intrinsic low dimensionality, InAs and InP nanowires have been explored to realize various novel devices and systems, including nanowire field-effect transistors, [1][2][3][4] light emitting devices, [5,6], solar cells, [7][8][9] and superconducting quantum devices. [18][19][20][21] It has also been demonstrated that InAs nanowires exhibit strong electron spin-orbit coupling and these nanowires are desired materials for realization of topological superconducting systems in which Majorana bound states can be present and exploited for topological quantum computation.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] Bulk InAs is a semiconductor with a small direct band gap (0.37 eV), low electron effective mass and high carrier mobility and has been widely used for the development of high-speed electronics. Bulk InP has a large direct band gap (1.34 eV) and excellent optical properties, and has been widely used in high-power electronics and highperformance optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires

Liao¹,

Luo²,

Chen³

et al. 2016

J. Phys.: Condens. Matter

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We report on a theoretical study of the electronic structures of the [111]-oriented, free-standing, zincblende InAs and InP nanowires with hexagonal cross sections by means of an atomistic sp 3 s * , spin-orbit interaction included, nearest-neighbor, tight-binding method. The band structures and the band state wave functions of these nanowires are calculated and the symmetry properties of the bands and band states are analyzed based on the C3v double point group. It is shown that all bands of these nanowires are doubly degenerate at the Γ-point and some of these bands will split into non-degenerate bands when the wave vector k moves away from the Γ-point as a manifestation of spin-splitting due to spin-orbit interaction. It is also shown that the lower conduction bands of these nanowires all show simple parabolic dispersion relations, while the top valence bands show complex dispersion relations and band crossings. The band state wave functions are presented by the spatial probability distributions and it is found that all the band states show 2π/3-rotation symmetric probability distributions. The effects of quantum confinement on the band structures of the [111]-oriented InAs and InP nanowires are also examined and an empirical formula for the description of quantization energies of the lowest conduction band and the highest valence band is presented. The formula can simply be used to estimate the enhancement of the band gaps of the nanowires at different sizes as a result of quantum confinement.

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“…2 The III-V semiconductor system InSb-InAs has the smallest bandgap with the highest electron mobility and presents a potential interest for future high speed electronic devices and far-infrared optoelectronics. 3,4 In this letter, we studied the diffusion of non-equilibrium carriers in an InSb-InAs NW heterostructure diode using the electron beam induced current (EBIC) technique.…”

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confidence: 99%

Electron beam induced current in InSb-InAs nanowire type-III heterostructures

et al. 2012

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Thermally driven unipolar and bipolar spin diode based on double quantum dots J. Appl. Phys. 112, 084324 (2012) Temperature-dependent properties of semimetal graphite-ZnO Schottky diodes Appl. Phys. Lett. 101, 162106 (2012) Millimeterwave Schottky diode on grapene monolayer via asymmetric metal contacts J. Appl. Phys. 112, 084302 (2012) Electrical and microstructural analyses of 200MeV Ag14+ ion irradiated Ni/GaN Schottky barrier diode Appl. Phys. Lett. 101, 153508 (2012) Theory of the suspended graphene varactor

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Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Cited by 76 publications

References 20 publications

Doping Incorporation in InAs nanowires characterized by capacitance measurements

Doping Incorporation in InAs nanowires characterized by capacitance measurements

Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires

Electron beam induced current in InSb-InAs nanowire type-III heterostructures

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