Electron beam induced current in InSb-InAs nanowire type-III heterostructures

Chen, C. Y.; Shik, A.; Pitanti, Alessandro; Tredicucci, Alessandro; Ercolani, Daniele; Sorba, L.; Beltram, Fabio; Ruda, Harry E.

doi:10.1063/1.4745603

Cited by 18 publications

(17 citation statements)

References 16 publications

(13 reference statements)

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“…For the particular model case of triangular potential V(x), a similar result has been earlier obtained in Ref. 10. It differs from Eq.…”

Section: Minority Carriers In Hj Insb-inassupporting

confidence: 81%

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Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions

Shik¹,

Chen²,

Pitanti³

et al. 2013

Journal of Applied Physics

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The electrical properties of nanowire-based n-InSb-n-InAs heterojunctions were investigated theoretically and experimentally. Analysis of the current-voltage characteristics showed that the current through the heterojunction is caused mostly by generation-recombination processes in the InSb and at the heterointerface. Due to the partially overlapping valence band of InSb and the conduction band of InAs, the second process is fast and activationless. Theoretical analysis showed that, depending on the heterojunction parameters, the flux of non-equilibrium minority carriers may have a different direction, explaining the experimentally observed non-monotonic coordinate dependence of the electron beam induced current

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“…For the particular model case of triangular potential V(x), a similar result has been earlier obtained in Ref. 10. It differs from Eq.…”

Section: Minority Carriers In Hj Insb-inassupporting

confidence: 81%

“…5 in the interval (0.1-0.7) lm with Eq. (12), L p2 was found to vary from 300 to 500 nm, 10 which corresponds to a positive sign for the EBIC. For x 0 < 0 ; that is, in the depletion layer of InSb, j p should be negative, as in ordinary Schottky diodes, so that the observed change in the EBIC sign, is well explained.…”

Section: Minority Carriers In Hj Insb-inasmentioning

confidence: 91%

Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions

Shik¹,

Chen²,

Pitanti³

et al. 2013

Journal of Applied Physics

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“…Recent developments in epitaxial growth of nanowires have opened up new possibilities for defect-free type-III interfaces. 54 , 55 The application of ZSs with semiconducting inclusion materials offers another route to the fabrication of this important class of semiconductor architectures. LTA-SiO 2 with polypyrrole in the pore is depicted in Figure 4 c. This case corresponds to a type-III offset, with the valence bands of the polypyrrole higher in energy than the conduction band of the ZS, due to the destabilizing effects of the lone pair on the nitrogen site.…”

Section: Semiconductor Applicationsmentioning

confidence: 99%

Electroactive Nanoporous Metal Oxides and Chalcogenides by Chemical Design

et al. 2017

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The archetypal silica- and aluminosilicate-based zeolite-type materials are renowned for wide-ranging applications in heterogeneous catalysis, gas-separation and ion-exchange. Their compositional space can be expanded to include nanoporous metal chalcogenides, exemplified by germanium and tin sulfides and selenides. By comparison with the properties of bulk metal dichalcogenides and their 2D derivatives, these open-framework analogues may be viewed as three-dimensional semiconductors filled with nanometer voids. Applications exist in a range of molecule size and shape discriminating devices. However, what is the electronic structure of nanoporous metal chalcogenides? Herein, materials modeling is used to describe the properties of a homologous series of nanoporous metal chalcogenides denoted np-MX2, where M = Si, Ge, Sn, Pb, and X = O, S, Se, Te, with Sodalite, LTA and aluminum chromium phosphate-1 structure types. Depending on the choice of metal and anion their properties can be tuned from insulators to semiconductors to metals with additional modification achieved through doping, solid solutions, and inclusion (with fullerene, quantum dots, and hole transport materials). These systems form the basis of a new branch of semiconductor nanochemistry in three dimensions.

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“…[8][9][10][11][12][13][14] In particular, EBIC microscopy is a perfectly dedicated tool to investigate the structural and the electrical properties of the three-dimensional nanostructured LEDs. In the past years, several EBIC investigations of single nanowires and nanowire devices built of different materials have been reported, [15][16][17][18][19][20] sometimes coupled with cathodoluminescence (CL) mapping. 9 Regarding nitride nanowires, in our previous work we have addressed the parallel transport properties of core-shell InGaN/GaN single wire LEDs.…”

Section: Introductionmentioning

confidence: 99%

Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

et al. 2015

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We report on the electron beam induced current (EBIC) microscopy and cathodoluminescence (CL) characterization correlated with compositional analysis of light emitting diodes based on core/shell InGaN/GaN nanowire arrays. The EBIC mapping of cleaved fully operational devices allows to probe the electrical properties of the active region with a nanoscale resolution. In particular, the electrical activity of the p-n junction on the m-planes and on the semi-polar planes of individual nanowires is assessed in top view and cross-sectional geometries. The EBIC maps combined with CL characterization demonstrate the impact of the compositional gradients along the wire axis on the electrical and optical signals: the reduction of the EBIC signal toward the nanowire top is accompanied by an increase of the CL intensity. This effect is interpreted as a consequence of the In and Al gradients in the quantum well and in the electron blocking layer, which influence the carrier extraction efficiency. The interface between the nanowire core and the radially grown layer is shown to produce in some cases a transitory EBIC signal. This observation is explained by the presence of charged traps at this interface, which can be saturated by electron irradiation.

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Electron beam induced current in InSb-InAs nanowire type-III heterostructures

Cited by 18 publications

References 16 publications

Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions

Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions

Electroactive Nanoporous Metal Oxides and Chalcogenides by Chemical Design

Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

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