Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

Tchernycheva, Maria; Neplokh, Vladimir; Zhang, H.; Lavenus, Pierre; Rigutti, Lorenzo; Bayle, Fabien; Julien, F. H.; Babichev, A. V.; Jacopin, Gwenolé; Largeau, L.; Ciechonski, Rafal; Vescovi, Giuliano; Kryliouk, O.

doi:10.1039/c5nr00623f

Cited by 71 publications

(80 citation statements)

References 36 publications

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“…26,27 Due to the inherent structural characteristics of NWs such as high aspect ratio, cylindrical shape, and difficulties in making electrical contacts, it is challenging to apply EBIC to NW device applications. So far, there have been a few reports on EBIC measurements of p-n junction of single NWs 21,25,[28][29][30] ; however, very little has been reported on EBIC of NWs in vertical array configuration [31][32][33] where additional information could be obtained such as identifying the possible substrate influence on NWSCs as well as evaluating the uniformity of electrical performance of a large number of NWs. In this paper, we demonstrate for the first time direct junction characterization and analysis of SAE-grown axial junction InP NW array solar cells based on EBIC measurements and electrical simulation.…”

Section: Introductionmentioning

confidence: 99%

Axial p‐n junction design and characterization for InP nanowire array solar cells

Gao

et al. 2018

Progress in Photovoltaics

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In this work, InP nanowire (NW) array solar cells with different axial p‐i‐n junction designs were investigated. The optical properties of the different NW structures were characterized through a series of microphotoluminescence measurements to extract important material parameters such as minority carrier lifetimes and internal quantum efficiencies. A glancing angle sputtering deposition technique has been developed to enable a direct visualization of the p‐n junctions in the vertical array of InP NW solar cells (NWSCs) using electron beam‐induced current (EBIC) technique. Based on EBIC and electrical simulation, it is found that the background doping in NWSC significantly affects the junction position. By modifying the junction design, the width and position of the p‐n junction can be varied effectively. By employing a p‐p−‐n structure, a high junction position (>1 μm from the substrate) and wide depletion width have been achieved as confirmed by EBIC measurement. Moreover, the NW growth substrate does not show any influence on the device behavior due to the fully decoupled junction position, indicating a promising structural design for future development of high‐performance, low‐cost flexible NW devices.

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Section: Introductionmentioning

confidence: 99%

Axial p‐n junction design and characterization for InP nanowire array solar cells

Gao

et al. 2018

Progress in Photovoltaics

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“…Further details about the EBIC setup can be found in Refs. [24,25]. The electron beam acceleration voltage of 3 kV, 10 kV and 15 kV and the extraction current of 10 μA were used in the measurements.…”

Section: Methodsmentioning

confidence: 99%

Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

Neplokh¹,

Ali²,

Julien³

et al. 2016

Materials Science in Semiconductor Processing

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“…Electron beam induced current (EBIC)measurement is a powerful SEM imaging modality which allows for visualization of the charge transport channels in semiconductor devices 28, 29 . However, this powerful technique was never used under elevated pressure conditions.…”

Section: Electrical Measurementsmentioning

confidence: 99%

A multi-environment nanocalorimeter with electrical contacts for use in a scanning electron microscope

et al. 2017

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We have developed a versatile nanocalorimeter sensor which allows imaging and electrical measurements of samples under different gaseous environments using the scanning electron microscope (SEM) and can simultaneously measure the sample temperature and associated heat of reaction. This new sensor consists of four independent heating/sensing elements for nanocalorimetry and eight electrodes for electrical measurements, all mounted on a 50 nm thick, 250 μm × 250 μm suspended silicon nitride membrane. This membrane is highly electron transparent and mechanically robust enabling in situ SEM observation under realistic temperatures, environmental conditions and pressures up to one atmosphere. To demonstrate this new capability, we report here on 1) in situ SEM-nanocalorimetry study of melting and solidification of polyethylene oxide, 2) the temperature dependence of conductivity of a nanowire; 3) the electron beam induced current measurements (EBID) of a nanowire in vacuum and air. Furthermore, the sensor is easily adaptable to operate in liquid environment and is compatible with most existing SEM. This versatile platform couples nanocalorimetry with in situ SEM imaging under various gaseous and liquid environments and is applicable to materials research, nanotechnology, energy, catalysis and biomedical applications.

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Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

Cited by 71 publications

References 36 publications

Axial p‐n junction design and characterization for InP nanowire array solar cells

Axial p‐n junction design and characterization for InP nanowire array solar cells

Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

A multi-environment nanocalorimeter with electrical contacts for use in a scanning electron microscope

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