Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

Neplokh, Vladimir; Ali, Ahmed Hamza H.; Julien, F. H.; Mukhin, I. S.; Cirlin, G. É.; Harmand, J. C.; Gogneau, N.; Tchernycheva, Maria

doi:10.1016/j.mssp.2016.03.002

Cited by 12 publications

(9 citation statements)

References 40 publications

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“…A possible explanation of J-V curve results is that Ga diffusion induces a p-Si at the GaN/Si interface and creates a p-n junction. Reichertz et al [14] and Neplokh et al [76] have verified the Al diffusion into the silicon substrate during the growth of nitride layers. Boron, Al, and Ga are IIIB group elements which can be a dopant for p-Si layer formation.…”

Section: Electrical and Optical Characteristics Analysismentioning

confidence: 98%

“…The series resistance R s values determined from Fig. 3b-d [72,75,76]. To elucidate the real photovoltaic performance in an actually illuminated area, effective-area PCE, PCE eff , establishes an efficiency based on the effective area which excludes the grid electrode area, while total-area PCE, PCE tot , considers the whole device area.…”

Section: Electrical and Optical Characteristics Analysismentioning

confidence: 99%

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Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

et al. 2020

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An effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si. The short-circuit current density is 14.96 mA/cm 2 and the open-circuit voltage is 0.28 V. Enhanced light trapping acquired via multiple reflections within the strain and defect free III-nitride nanorod array structures and the short-wavelength responses boosted by the wide bandgap III-nitride constituents are believed to contribute to the observed enhancements in device performance.

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Section: Electrical and Optical Characteristics Analysismentioning

confidence: 98%

Section: Electrical and Optical Characteristics Analysismentioning

confidence: 99%

Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

et al. 2020

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“…Molecular beam epitaxy 19 – 21 , gas phase epitaxy 22 – 24 and magnetron sputter epitaxy 25 – 28 are the most often used techniques of nanopillars growth. Such technology allows fabrication of high quality NW exhibiting excellent electric and optical properties, even in the case of substantial mismatch of the layer parameter between NW and substrate material and allows fabrication of III-V NWs on Si substrates 29 , 30 . Despite recent significant advances in improving growth of semiconductor nanowires it is difficult to control regularity, orientation and arrangement of nanowires for optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

Pozina

Gubaydullin

Mitrofanov

et al. 2018

Sci Rep

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We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches in the mask by FIB with a diameter of 40 nm with subsequent MOVPE growth of GaN within trenches. It was observed that the growth rate of GaN is substantially increased due to enhanced bulk diffusion of the growth precursor therefore the model for analysis of the growth rate was developed. The GaN strips fabricated by this method demonstrate effective luminescence properties. The structures demonstrate enhancement of spontaneous emission via formation of Fabry-Perot modes.

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“…Semiconductor photovoltaics is one of the implementation field for low dimensional nanostructures such as nanowires [8][9][10][11]. First of all, nanowires grown on the face side of the solar cell are known to improve light absorption of the device [12], which especially important if we're considering Si-based cell, because Si itself possess high reflection coefficient close to 30% [13,14].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of GaN nanowires on Si (111) substrates by molecular beam epitaxy

Bolshakov

Sapunov

Можаров

et al. 2016

J. Phys.: Conf. Ser.

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Abstract. In this work we study growth of semiconductor GaN nanowires (NWs) on Si(111) substrates by means of molecular beam epitaxy. We demonstrate that the substrate temperature affects both the surface density and growth rate of the synthesized NWs. It was determined that at a fixed flux of nitrogen equal to 1.3 cm 3 /min the maximum growth rate of NWs is ~ 38 nm/h at a substrate temperature -800 o C. It was also found that the growth rate of NWs on the substrates treated with the oxide removal procedure is half the growth rate on substrates covered with oxide, while their surface density is twice higher in the first case. In addition we have studied influence of Ga flux on NWs formation.

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Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates

Cited by 12 publications

References 40 publications

Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

Synthesis of GaN nanowires on Si (111) substrates by molecular beam epitaxy

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