Abstract:Abstract. In this work we study growth of semiconductor GaN nanowires (NWs) on Si(111) substrates by means of molecular beam epitaxy. We demonstrate that the substrate temperature affects both the surface density and growth rate of the synthesized NWs. It was determined that at a fixed flux of nitrogen equal to 1.3 cm 3 /min the maximum growth rate of NWs is ~ 38 nm/h at a substrate temperature -800 o C. It was also found that the growth rate of NWs on the substrates treated with the oxide removal procedure is… Show more
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