Temperature dependent performance of coplanar waveguide (CPW) on substrates of various materials

Taub, Susan R.; Young, Paul G.

doi:10.1109/mwsym.1994.335175

Cited by 10 publications

(3 citation statements)

References 2 publications

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“…However, silicon substrates do have slightly higher dielectric loss than traditional microwave substrates. Our experiments show that a 30,000-R-cm silicon wafer has a lower dielectric loss than a semi-insulating GaAs wafer [13]. Because the wafers are of the high-resistivity type, dc bias and high operating temperatures can increase this loss.…”

Section: Introductionmentioning

confidence: 76%

Microwave characterization of slot line and coplanar strip line on high‐resistivity silicon for a slot antenna feed network

Simons

Taub

Lee

et al. 1994

Micro & Optical Tech Letters

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This article presents the effective dielectric constant (ϵeff) and attenuation constant (α) of an unshielded slot line and a coplanar strip line on a high‐resistivity (5000–10,000 ω‐cm) silicon wafer. The ϵeff (dc to 40 GHz) and α (dc to 26.5 GHz) in each case are determined from the measured resonant frequencies and insertion loss of a ring resonator. The measurements are carried out at room temperature. No dc bias is applied to the transmission lines. The attenuation for slot line and coplanar stripline on silicon are compared with microstrip line and coplanar waveguide on other semiconductor substrate materials. Lastly, a microstrip‐to‐slot‐line transition and its use in a feed network for linearly tapered slot antennas is demonstrated. © 1994 John Wiley & Sons, Inc.

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Section: Introductionmentioning

confidence: 76%

Microwave characterization of slot line and coplanar strip line on high‐resistivity silicon for a slot antenna feed network

Simons

Taub

Lee

et al. 1994

Micro & Optical Tech Letters

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“…This not only makes the fabrication procedure rather complicated, but also results in a deteriorated thermal performance. On the other hand, there have been reports on low-loss microwave transmission lines formed directly on high-resistivity Si substrates [5][6][7]. By adopting this technique, the fabrication procedure of Si-based submounts can be much simplified and the cost can be reduced.…”

mentioning

confidence: 99%

Novel low-cost wideband Si-based submount for 40 Gb/s optoelectronic devices

Xiong

Wang

Cai

et al. 2005

Microw. Opt. Technol. Lett.

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A novel low‐cost wideband Si‐based submount is proposed and fabricated for 40‐Gb/s optoelectronic devices. The submount contains a coplanar waveguide (CPW) for microwave‐signal feeding and a TaN thin‐film resistor for impedance matching. The CPW transmission line is directly formed on high‐resistivity Si substrate and exhibits a transmission loss as low as 0.165 dB/mm up to 40 GHz. Such a configuration has the advantage of a simplified fabrication procedure and efficient heat dissipation. As a demonstration, a high‐speed electroabsorption (EA) modulator is chip‐level packaged using the Si‐based submount. The small‐signal modulation bandwidth is measured to be more than 33 GHz, which is the first report of 40‐Gb/s optoelectronic devices on Si‐based submount. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 90–93, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20733

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“…This study reports no dependency on applied DC bias on the RF characteristics of coplanar structures (CPW and meander inductor) in Schottky contact with the HR Si substrate from -50 "C to 100 "C. In this paper, we explain through semiconductor device simulations with emphasis on the CPW transmission line the reasons why the Schottky coplanar structures on HR Si substrate have no DC bias dependence on their RF characteristic The impact of Si dielectric losses on microstrip transmission lines as a function of temperature have been theoretically analyzed by upto 100 "C. Sobol [4] and Rosen [5]. Temperature effects were investigated experimentally by Taub [6] on CPW transmission line on none-commercially available HR Si with resistivities in the 30 k SZcm range which is almost an order of magnitude higher than the one under study in this paper. As previously mentioned, bias dependence experimental work has been done by Levesque [2] but this was done on microstrip transmission lines.…”

Section: Introductionmentioning

confidence: 99%

Theoretical and experimental investigation of bias and temperature effects on high resistivity silicon substrates for RF applications

Reyes

El-Ghazaly

Dydyk

1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192)

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Theoretical and experimental comparisons show that the RI? characteristics of the a CPW in Schottky contact with a HR Si substrate are bias independent for all practical temperatures, upto 100 "C. Bias dependence on the RF characteristics of the transmission line are noticed above 100 "C when the ohmic dielectric loss of the HR Si becomes the dominant loss mechanism on the coplanar structures under study. This is a direct result of the increase of intrinsic carrier density.

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Temperature dependent performance of coplanar waveguide (CPW) on substrates of various materials

Abstract: ABSTRACT

Cited by 10 publications

References 2 publications

Microwave characterization of slot line and coplanar strip line on high‐resistivity silicon for a slot antenna feed network

Microwave characterization of slot line and coplanar strip line on high‐resistivity silicon for a slot antenna feed network

Novel low-cost wideband Si-based submount for 40 Gb/s optoelectronic devices

Theoretical and experimental investigation of bias and temperature effects on high resistivity silicon substrates for RF applications

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