Novel low-cost wideband Si-based submount for 40 Gb/s optoelectronic devices

Abstract

A novel low‐cost wideband Si‐based submount is proposed and fabricated for 40‐Gb/s optoelectronic devices. The submount contains a coplanar waveguide (CPW) for microwave‐signal feeding and a TaN thin‐film resistor for impedance matching. The CPW transmission line is directly formed on high‐resistivity Si substrate and exhibits a transmission loss as low as 0.165 dB/mm up to 40 GHz. Such a configuration has the advantage of a simplified fabrication procedure and efficient heat dissipation. As a demonstration, a high‐speed electroabsorption (EA) modulator is chip‐level packaged using the Si‐based submount. The small‐signal modulation bandwidth is measured to be more than 33 GHz, which is the first report of 40‐Gb/s optoelectronic devices on Si‐based submount. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 90–93, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20733