High-Speed Coplanar Waveguide Based Submount for 40 Gbit/s Electroabsorption Modulator

Xiong, Bing; Tian, Jian-Bo; Wang, Jian; Cai, Pengfei; Sun, Changzheng; Luo, Yi

doi:10.1007/s10762-005-8446-z

Cited by 5 publications

(5 citation statements)

References 4 publications

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“…The EML chip is die-bonded to a sapphire submount, which contains a CPW transmission line for microwave signal feeding and a 50 Ta 2 N thin-film resistor for impedance matching. 10) The submount carrying the EML chip is mounted in a metal housing structure and directly soldered to a K-connector. And a tapered fiber is used to couple the modulated light out of the module.…”

Section: Gb/s Algainas Electroabsorption Modulated Laser Module Basedmentioning

confidence: 99%

“…To fabricate the CPW transmission line, Ti/Cu/ Ni/Au electrode is sputtered onto a 470-mm-thick sapphire substrate, and the thickness of the gold layer is then increased to 2 mm by electroplating. 10) The widths of the signal, ground electrodes, and the gap are designed to be 500, 1000, and 189 mm, respectively. The transmission loss due to the coaxial-to-CPW transition is estimated to be less than 0.5 dB up to 40 GHz.…”

Section: Gb/s Algainas Electroabsorption Modulated Laser Module Basedmentioning

confidence: 99%

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40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

Cai¹,

Sun²,

Xiong³

et al. 2007

jjap

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A 40 Gb/s transmitter module containing an AlGaInAs electroabsorption (EA) modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser has been fabricated using identical epitaxial layer (IEL) approach. Low loss coaxial-to-coplanar waveguide (CPW) transition is designed and fabricated for the module. By improving the quality of the anti-reflection (AR) coating on the EA modulator facet and optimizing the structure of the CPW transmission line, resonances in the frequency response of the module have been effectively suppressed. The module exhibits a small signal modulation bandwidth over 35 GHz, and clear eye opening has been demonstrated under 40 Gb/s nonreturn-to-zero (NRZ) code modulation.

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Section: Gb/s Algainas Electroabsorption Modulated Laser Module Basedmentioning

confidence: 99%

Section: Gb/s Algainas Electroabsorption Modulated Laser Module Basedmentioning

confidence: 99%

40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

Cai¹,

Sun²,

Xiong³

et al. 2007

jjap

Self Cite

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“…A K-connector is used to feed the modulation signal into the module. A coplanar waveguide (CPW) transmission line with a 50 Ω Ta 2 N thin-film matching resistor at its end is used to connect the K-connector to the EML chip [12]. A tapered fiber is used to couple the modulated light out of the EML module.…”

Section: Module Package and Modulation Performancementioning

confidence: 99%

40 Gb/s InGaAlAs EML module based on identical epitaxial layer integration scheme

Sun

Xiong

Wang

et al. 2008

Optoelectronic Materials and Devices III

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High-speed AlGaInAs multiple-quantum-well (MQW) electroabsorption modulated lasers (EMLs) based on identical epitaxial layer (IEL) integration scheme are developed for 40 Gb/s optical fiber communication systems. The electroabsorption modulator (EAM) section adopts a narrow high-mesa waveguide formed by inductively coupled plasma (ICP) dry etching technique, and a self-aligned planarization technique is employed to further reduce the device capacitance. Resonances are observed in the small signal modulation response of the packaged EML module, which are attributed to parallel-plate modes of the coplanar waveguide (CPW) transmission line used for modulation signal feeding and the residual reflection at the modulator facet, respectively. The influence of such resonances on the large signal eyediagram performance of the device is studied, and methods for their suppression are presented. Clear eye opening under 40 Gb/s non-return-to-zero (NRZ) modulation has been demonstrated for the optimized EML module.

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“…To test the high frequency modulation performance of the integrated modulator, the device chip was mounted onto a submount with a coplanar waveguide (CPW) transmission line and a 50 Ω thin-film termination resistor [4]. A signal modulation bandwidth over 40 GHz has been demonstrated [5].…”

Section: High-speed Emls Based On Iel Integration Schemementioning

confidence: 99%

Compound Semiconductor Based Integrated Devices

Luo

Sun

Xiong

et al. 2007

2007 International Nano-Optoelectronics Workshop

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In this talk, we give a brief introduction to our work on compound semiconductor based integrated devices, including regrowth-free distributed feedback (DFB) lasers and high-speed electroabsorption modulated lasers (EMLs). IntroductionInGaAsP multiple-quantum-well (MQW) based optoelectronic devices are widely used in modern fiber communication systems. Compared with InGaAsP materials, AlGaInAs MQWs exhibit larger conduction band discontinuity and smaller valence band discontinuity. Such band structure makes AlGaInAs MQWs suitable for the fabrication of high performance optoelectronic devices. The large conduction band discontinuity enhances the electron confinement in semiconductor lasers and results in a better temperature performance. On the other hand, the small valence band discontinuity helps alleviate hole pile-up in electroabsorption (EA) modulators, thus allowing a higher optical saturation intensity. In this talk, we present our work on AlGaInAs MQWs based integrated optoelectronic devices, including regrowth-free distributed feedback (DFB) lasers and high-speed electroabsorption modulated lasers (EMLs).

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High-Speed Coplanar Waveguide Based Submount for 40 Gbit/s Electroabsorption Modulator

Cited by 5 publications

References 4 publications

40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme

40 Gb/s InGaAlAs EML module based on identical epitaxial layer integration scheme

Compound Semiconductor Based Integrated Devices

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