Temperature dependent linear HEMT model extracted with multi-temperature optimization

Abstract

Temperature dependent model is conventionally developed with 1) individual linear model extraction at each temperature and 2) temperature dependence extraction for each model parameter. A novel approach based on a multitemperature optimization is proposed in this study. The new approach is faster and more accurate since the linear models at different temperatures are extracted simultaneously and interrelatedly. It has been found, based on the model extracted, that there is a specific gate-source voltage of Vgs0, where the transconductance (Gm) keeps constant versus temperature. Gm increases (decreases) with temperature for Vgs<Vgs0 (Vgs>Vgs0). With increasing temperature, a substantial decrease in extrinsic inductance is also observed. Our findings are believed to be useful for designing HEMT amplifiers with less temperature dependence.

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

“…The most evident difference between the GaAs and GaN technologies is that the former is more mature, whereas the latter is more suited for high-power applications, owing to its wide bandgap nature. Over the years, many studies have focused on the high-frequency characterization and modeling of the temperature-dependent behavior of both GaAs [3][4][5][6][7][8][9][10][11][12] and GaN [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] HEMTs. This is because the operating temperature can remarkably affect the device performance, reliability, and lifetime, which are key features in practical applications, especially those in harsh environmental conditions [28].…”

Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology

“…The continuous progress of the device technology leads to a continuous need of investigating and understanding device performance. Over the years, many studies have been focused on investigating the temperature-dependent DC and microwave performance of the HEMTs based on the GaAs technology, [5][6][7][8][9][10][11][12][13][14][15][16][17][18] even down at cryogenic temperatures. [19][20][21][22][23][24] To contribute to the advancement of knowledge on the thermal effects on GaAs-based HEMT characteristics, this work analyzes the variations in performance of the transistor behavior with increasing temperature.…”