Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET

Mookerjea, S.; Mohata, Dheeraj; Mayer, Theresa S.; Narayanan, V.; Datta, Suman

doi:10.1109/led.2010.2045631

Cited by 209 publications

(108 citation statements)

References 7 publications

Supporting

Mentioning

100

Contrasting

Order By: Relevance

“…This is due to the reduced E beff decreases the blocking barrier, which enhances both the BTBT probability and traps assisted tunneling process at OFF-state condition. 27 Furthermore, the bandgaps of source and channel materials also decreased with reducing E beff , and a small energy gap leads to an additional increase of the OFF-state leakage due to more pronounced thermal emission process. 28 Therefore, a proper E beff with appropriate bandgap energy in source and channel layer should be selected in order to fulfill high I ON with desired I ON /I OFF ratio.…”

Section: Device Performancesmentioning

confidence: 99%

“…About 4 orders of magnitude higher OFF-state leakage current was observed from the structure C than that from structure B due to higher defect density within the source/channel interface and channel/drain layers of structure C. The value of I OFF was extensively amplified due to the broken band alignment nature of structure C. In this case, the direct BTBT process dominates the OFF-state transport, 10 which is different as the Shockley-Read-Hall recombination mechanism in the OFF-state transport of most staggered gap TFETs. 10,27 An additional negative gate bias is required to turn off the OFF-state tunneling mechanism. 29 Besides, I ON of the TFET from structure C is smaller than that from structure B under the same applied drain voltage.…”

Section: Device Performancesmentioning

confidence: 99%

See 1 more Smart Citation

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Zhu

Jain

Vijayaraghavan

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inTunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction J. Appl. Phys. 113, 094502 (2013) The compositional dependence of effective tunneling barrier height (E beff ) and defect assisted band alignment transition from staggered gap to broken gap in GaAsSb/InGaAs n-channel tunnel field effect transistor (TFET) structures were demonstrated by x-ray photoelectron spectroscopy (XPS). High-resolution x-ray diffraction measurements revealed that the active layers are internally lattice matched. The evolution of defect properties was evaluated using cross-sectional transmission electron microscopy. The defect density at the source/channel heterointerface was controlled by changing the interface properties during growth. By increasing indium (In) and antimony (Sb) alloy compositions from 65% to 70% in In x Ga 1Àx As and 60% to 65% in GaAs 1Ày Sb y layers, the E beff was reduced from 0.30 eV to 0.21 eV, respectively, with the low defect density at the source/channel heterointerface. The transfer characteristics of the fabricated TFET device with an E beff of 0.21 eV show 2Â improvement in ON-state current compared to the device with E beff of 0.30 eV. On contrary, the value of E beff was decreased from 0.21 eV to À0.03 eV due to the presence of high defect density at the GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As heterointerface. As a result, the band alignment was converted from staggered gap to broken gap, which leads to 4 orders of magnitude increase in OFF-state leakage current. Therefore, a high quality source/channel interface with a properly selected E beff and well maintained low defect density is necessary to obtain both high ON-state current and low OFF-state leakage in a mixed As/Sb TFET structure for high-performance and lower-power logic applications. V C 2012 American Institute of Physics. [http://dx

show abstract

Section: Device Performancesmentioning

confidence: 99%

Section: Device Performancesmentioning

confidence: 99%

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Zhu

Jain

Vijayaraghavan

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…4.2(e), we fix the VGate-VSource voltage while measuring source/drain current versus source/drain voltage (ID-VD) of an In0.53Ga0.47As TFET, that has a poor gate oxide [24]. Effectively, this is a 2-terminal measurement on a 3-terminal device.…”

Section: Measuring the Electronic Transport Band Edge Steepnessmentioning

confidence: 99%

“…Fortunately, the conductance is proportional to the tunneling density of states. (e) The G=ID/VD versus VD for an In53Ga0.47As TFET is plotted [24]. The measured subthreshold swing voltage is 216 mV/decade while the semilog conductance swing voltage is 165 mV/decade.…”

Section: Measuring the Electronic Transport Band Edge Steepnessmentioning

confidence: 99%

“…This process occurs when an electron tunnels to a trap in the band gap and is then thermally excited out of the trap. This can result in a temperature dependent subthreshold swing voltage as well as temperature dependent threshold shifts [24,[44][45][46]. It also increases the subthreshold swing voltage by preventing the tunneling from turning off.…”

Section: Other Design Issues To Avoidmentioning

confidence: 99%

See 1 more Smart Citation

Designing a low-voltage, high-current tunneling transistor

Agarwal

Yablonovitch

2014

CMOS and Beyond

View full text Add to dashboard Cite

The Tunnel Field‐Effect Transistor

Verreck

Groeseneken

Verhulst³

2016

Wiley Encyclopedia of Electrical and Electronics Engineering

View full text Add to dashboard Cite

Scaling of metal‐oxide‐semiconductor field‐effect transistors (MOSFET) is hitting fundamental limits due to power issues. In this article, an alternative transistor concept, the tunnel FET (TFET), is discussed, which employs quantum mechanical band‐to‐band tunneling to reduce power consumption. The main operating principle is explained, followed by a discussion of different modeling approaches. Next, the main performance challenges are presented. Different options to overcome these challenges are discussed. These options include a different material choice and alternative implementations, including dopant pockets, improved gate configurations, and strain. Specific considerations for using TFET in a circuit are highlighted. The article concludes with an overview of experimental realizations.

show abstract

Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET

Cited by 209 publications

References 7 publications

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Designing a low-voltage, high-current tunneling transistor

The Tunnel Field‐Effect Transistor

Contact Info

Product

Resources

About