Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Tunç, Tuncay; Altındal, Ş.; Uslu, İbrahım; Dökme, İlbilge; Uslu, Habibe

doi:10.1016/j.mssp.2011.01.018

Cited by 64 publications

(38 citation statements)

References 49 publications

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“…Among these polymers, PVA nano-fabrics have attracted much attention due to its unique chemical and physical properties, as well as its industrial applications [13]. In general, PVA has a poor electrical conductivity, but this conductivity in PVA arises due to the high physical interactions between polymer chains, via hydrogen bonding between the hydroxyl groups and the doping metals, and is mainly dominated by the properties of the amorphous regions [13,14].…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Alialy¹,

Tecimer²,

Uslu³

et al. 2017

J Nanomed Nanotechnol

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In order to see the effect of Bi-doped PVA interfacial layer on electrical characteristics, both Au/n-Si (MS) and Au/Bidoped PVA/n-Si (MPS) type Schottky barrier diodes (SBDs) were fabricated, and their main electrical parameters were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements, in dark and under illumination at room temperature. Forward bias semi-logarithmic I-V plots of these SBDs show two distinct linear regions, with different slopes in the low and intermediate voltage region. Such behavior in I-V plots was explained by two parallel diodes model. Experimental results show that the ideality factor (n), barrier height (φ b ), series and shunt resistances (R s and R sh ), and the density of interface states/traps (N ss ) are strong functions of illumination level and applied bias voltage. The R s values were determined from the I-V characteristics, by using both Ohm's law. The energy distribution profile of N ss was also obtained from the forward bias I-V characteristics, by taking into account voltage dependent barrier height (φ e ) and ideality factor (n). It was found that Bi-doped PVA layer lead to a considerable decrease in the leakage current, R s and N ss and increase in R sh and rectifier rate (RR=I F /I R ). In conclusion, a thin Bi-doped PVA interfacial layer, considerably improved the diode performance, both in dark and under illumination.account voltage dependent barrier height (φ B (V)) and ideality factor n(V). Experimental results show that the Bi-doped interfacial PVA layer led to considerable decrease in the leakage current, R s and N ss and led to increase in R sh and rectifier rate (RR=I F /I R ). So, it can be said that Bi-doped PVA considerably improved the performance of SBD. Experimental ProcedureFor the fabrication of Au/PVA (Bi-doped)/n-Si (MPS), (phosphor doped) single crystal silicon with surface orientation, 350 μm thickness and 0.7 Ω.cm resistivity was used. Si wafer was degreased in organic solution of peroxide-ammoniac solution in 10 minutes, and then etched in a sequence of H 2 O+HCl solution, and finally quenched in de-ionized water resistivity of 18 MΩ.cm for a prolonged time. Preceding each cleaning step, the wafer was rinsed thoroughly in de-ionized water. Immediately after surface cleaning, high purity (99.999%) gold (Au), with a thickness of ~2000Å, was thermally evaporated onto the whole back side of Si wafer, in a pressure about 10 -6 Torr in high vacuum metal evaporation system. In order to perform a low resistivity ohmic back metal contact, n-Si wafer was sintered at about 450°C for 5 min in N 2 atmosphere.Immediately after the formation of ohmic contact, 0.5 g of bismuth acetate was mixed with 50 g of polyvinyl Alcohol (PVA), molecular Citation: Alialy S, Tecimer H, Uslu H, Altındal Ş (2013) A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA

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Section: Introductionmentioning

confidence: 99%

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Alialy¹,

Tecimer²,

Uslu³

et al. 2017

J Nanomed Nanotechnol

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“…The current-voltage characteristic of Au/V 2 O 5 /n-Si SBDs at 145 K is also shown in the inset of figure 2. However, many research groups [6][7][8] have reached up to 80 K using IL of different organic or polymer materials. Again, in order to determine Schottky parameters such as series resistance (R s ), ideality factor and barrier height from the temperature dependent forward bias I-V characteristics we have employed the model of Cheung and Cheung.…”

Section: A Current-voltage Characteristicsmentioning

confidence: 99%

“…A PVA film doped with different concentrations of nickel (Ni) and zinc (Zn) as IL between metal and semiconductor was also reported. 7 Further, Yüksel et al 8 used spin coated perylene-monoimide (PMI) organic semiconductor on n-Si wafer to formed a Schottky barrier diode. Of late, high work function based transition metal oxides (TMO) such as Molybdenum trioxide (MoO 3 ) 9 and Tungsten trioxide (WO 3 ) 10 have been used as an IL for Schottky device applications.…”

Section: Introductionmentioning

confidence: 99%

Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode

et al. 2017

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Electronic properties of Au/V2O5/n-Si Schottky device have been investigated by temperature dependent current–voltage (I–V) and capacitance–voltage (C–V) measurements ranging from 300 K to 150 K. Ideality factor (n) and barrier height (ϕ) for the Schottky device were obtained from I–V characteristics as 2.04 and 0.83 eV at 300 K and 6.95 and 0.39 eV at 150 K respectively. It was observed that in presence of inhomogeneity at metal–semiconductor interface, the ideality factor increases and barrier height decreases with the decrease of temperature. The Richardson constant value was estimated as 137 A–cm−2–K−2 from modified Richardson plot, which is closer to the known theoretical value of n-Si where mean value of barrier height (ϕb0¯), and its standard deviation (σ0) were estimated using double Gaussian distribution (DGD) analysis. Different device parameters, namely, built-in potential, carrier concentration, image force lowering and depletion width were also obtained from the C–V–T measurements. First time use of V2O5 thin-film as an interfacial layer (IL) on Au/V2O5/n-Si Schottky diode was successfully explained by the thermionic emission (TE) theory. The interesting result obtained in this present work is the V2O5 thin-film reduced its conducting capability with decreasing temperature, while it shows a totally insulating behaviour below 150 K.

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“…Therefore, parameters such as interface states and series resistance play an important role in the determination of reasonable electrical characteristics of the metal-organic-metal (MOM) type diode. The information of such parameters can be obtained from the conductance and capacitance methods such as conductance-voltage-frequency (G-V-f) and capacitance-voltage-frequency (C-V-f) measurements [17][18][19][20]. These measurements are common tools to characterize the quality of the insulator/organic interfaces and various measurement techniques are available for determining the interface trap density [21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

et al. 2017

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Abstract.A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittancebased measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 -10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 10 12 eV -1 cm -2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

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Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Cited by 64 publications

References 49 publications

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

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