Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)

Tecimer, H.; Türüt, A.; Uslu, Habibe; Altındal, Ş.; Uslu, İbrahım

doi:10.1016/j.sna.2013.05.027

Cited by 78 publications

(53 citation statements)

References 33 publications

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“…The observed increase in barrier height with increase in temperature disagrees with the negative temperature coefficient of II-IV semiconductor material [29,30]. Several researchers have observed the same trend on various Schottky contacts [12,27,30,31] and they have explained it to be possibly related to the temperature-activated current transport of carriers across the MS interface. These carriers at low temperatures are able to surmount the lower barriers through tunneling and therefore the current will be dominated by transport of charge carriers through the patches of lower SBH.…”

Section: Methodsmentioning

confidence: 88%

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Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

Mayimele

Diale

Mtangi

et al. 2015

Materials Science in Semiconductor Processing

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We report on a systematic investigation of temperature dependent current-voltage (I-V) characteristics of Pd/ZnO Schottky barrier diodes in the 30-300 K temperature range. The ideality factor was observed to decrease with increase in temperature, whilst the barrier height increases with increase in temperature. The observed trend has been attributed to barrier inhomogeneities, which results in a distribution of barrier heights at the interface.

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Section: Methodsmentioning

confidence: 88%

“…The plot shows some linear behavior at high temperatures the temperature is lowered, the current will flow preferentially through the lower barriers in the potential distribution [9,12,14,20,31].…”

Section: Richardson Constantmentioning

confidence: 99%

Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

Mayimele

Diale

Mtangi

et al. 2015

Materials Science in Semiconductor Processing

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“…The higher values of n can be attributed to the presence of barrier height inhomogeneities at the interface, minority carrier injections, the image force effect and the formation of a particular distribution state at the semiconductor band gap [11]. Several researchers [8,12] reported a similar behaviour of the barrier height, which disagree with the negative temperature coefficient of resistance in II-IV metal-semiconductors (MS). Another possible explanation of the observed behaviour is the temperature-activated current transport of charge carriers across the MS interface [13].…”

Section: Resultsmentioning

confidence: 99%

“…However, in the case of inhomogeneous barrier potential between metal and semiconductor, the structure's barrier potential is resembled to a barrier consisting of higher and lower patches from which current pass through. Thus, it is possible to explain it through TE theory with the Gaussian distribution of the barrier potential [8].…”

Section: Introductionmentioning

confidence: 99%

Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes

Mayimele

Rensburg

Auret

et al. 2016

Physica B: Condensed Matter

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We report on the analysis of current voltage (I-V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80-320 K temperature range. Assuming thermionic emission (TE) theory, the forward bias I-V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Cheung's method in the extraction of the series resistance with Ohm's law, it was observed that at lower temperatures (T<180 K) the series resistance decreased with increasing temperature, the absolute minimum was reached near 180 K and increases linearly with temperature at high temperatures (T>200 K). The barrier height and the ideality factor decreased and increased, respectively, with decrease in temperature, attributed to the existence of barrier height inhomogeneity. Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99 eV and a standard deviation of 0.02 eV. A mean barrier height of 0.11 eV and Richardson constant value of 37 A cm -2 K -2 were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights.

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“…This means that, the resistance is affected by the applied frequency, which is caused by the dependency of the interface states charges on frequency. At low frequencies, these charges can follow the a. c. signal, and an excess capacity can be formed, that is resulted in the high value of resistance [16,17]. …”

Section: Resultsmentioning

confidence: 99%

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

İmer

Tombak

Korkut

2016

SDÜ Fen Bil Enst Der

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Abstract:In this study, the photovoltaic device application of bromothymol blue (BTB) as an organic interlayer has been reported. After Al back contact fabrication on the surface of the chemically cleaned substrate by thermal evaporation method, the organic interlayer has been grown on p-Si substrate via spin coating technique. Al top contacts have been formed on this organic thin film to finalize the device constructions. The different illumination intensities were exposed to the prepared sample for the enhancement in the photovoltaic properties of device. The fundamental photovoltaic parameters such as open circuit voltage (Voc), short circuit current (Isc) and output power (P) were determined for the device under different illuminations. The photocurrent and the photo voltage have been increased with the increasing in illumination intensity. The dependence of the capacitance on the voltage at high and low frequency has been also reported for the studied device. Consequently, it has been confirmed that the illumination intensity has an important influence on the photovoltaic parameters of the device. Özet: Bu çalışmada, organik ara yüzey olarak brom timol mavisi (BTB) kullanılarak foto voltaik aygıt uygulaması rapor edilmiştir. Kimyasal olarak temizlenen tabanın mat yüzeyine ısıl buharlaştırma yöntemiyle Al arka kontak oluşturulduktan sonra, dönel kaplama yardımıyla organik ara yüzey tabakası Si taban üzerine kaplanmıştır. Aygıt üretimini tamamlamak için, bu organik ince filmin üzerine Al üst kontaklar oluşturulmuştur. Aygıtın foto voltaik özelliklerini iyileştirmek amacıyla hazırlanan örnek farklı şiddetlerdeki aydınlamaya maruz bırakılmıştır. Farklı aydınlanmalar altında aygıtın açık devre voltajı (Voc), kısa devre akımı (Isc) ve çıkış gücü (P) gibi temel güneş pili parametreleri belirlenmiştir. Aydınlanma şiddetinin artması ile fotoakım ve fotogerilim değerleri artmıştır. Ayrıca, yüksek ve düşük frekans değerlerinde aygıt sığasının voltaj bağımlılığı rapor edilmiştir. Aydınlanma şiddetinin üretilen aygıtın fotovoltaik parametreleri üzerinde önemli bir etkisinin olduğu sonucuna varılmıştır. Spin Kaplama Yöntemiyle Hazırlanan Organik Arayüzeyi

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Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)

Cited by 78 publications

References 33 publications

Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

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