Temperature dependence performances of InAs/GaSb superlattice photodiode

Cervera, C.; Jaworowicz, Katarzyna; Aït‐Kaci, H.; Chaghi, R.; Rodriguez, J. B.; Ribet-Mohamed, I.; Christol, Philippe

doi:10.1016/j.infrared.2010.12.025

Cited by 19 publications

(16 citation statements)

References 19 publications

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“…In some of the recently published papers related to high operating temperature (HOT) T2SL devices (see, e.g., Cervera et al [12]) is mentioned the difficulties connected with fitting procedure between measured I-V characteristics and theoretical predicted results above 200 K. In our opinion these difficulties are strictly connected with the influence of series resistance in high-temperature region. Because R seriesvalue is connected in a series to all generation-recombination mechanisms (see Figure 3), we should solve the nonlinear problem to obtain voltage drops on both whole device except series resistance and a series resistance separately (see discussion in [16]).…”

Section: Resultsmentioning

confidence: 89%

“…Moreover, correct interpretations of measured detector characteristics are often difficult due to fact that T2SLs' band structures are much more complicated than bulk materials [7]. From this reason, there have been developed many simplified models [8][9][10][11][12][13], which assume that T2SL electrical parameters are mainly dependent on energy difference between first conduction and heavy hole miniband (which is treated as an effective bandgap). For an approximative describing of the detector transport mechanisms, the wellknown standard theory of p-n junction is used [2,14].…”

Section: Introductionmentioning

confidence: 99%

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Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes

Wróbel

Martyniuk

Rogalski

2012

Advances in Optical Technologies

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We analyze some of the consequences of omitting series resistance in InAs/GaSb p-i-n T2SL photodiode dark current modelling, using simplified p-n junction model. Our considerations are limited to generation-recombination and diffusion-effective carrier lifetimes to show the possible scale of over- or underestimating photodiodes parameters in high-temperature region. As is shown, incorrect series resistance value might cause discrepancies in τgr and τdiff's estimations over one order of magnitude.

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Section: Resultsmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes

Wróbel

Martyniuk

Rogalski

2012

Advances in Optical Technologies

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“…It is generally believed that SRH processes are the dominating factor contributing to shorter carrier lifetimes (<100 ns) in both MWIR and LWIR type II SLS detectors [72]. For LWIR binary SLS absorbers, the rapid increase in the Auger coefficient with increasing cutoff wavelength results in short electron lifetimes that are typically in the range of 15-30 ns at 77 K, and even shorter for VLWIR [15].…”

Section: Shockley-read-hall (Srh) Generation-recombination (Gr) Currentmentioning

confidence: 99%

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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“…The identification of dark current mechanisms in an SL structure such as diffusion, generation-recombination (GR), band to band tunneling (BTB), trap assisted tunneling (TAT) currents and extracted carrier lifetimes are very important parameters for understanding of the transport mechanism and improving the detector performance. In the literature, temperature dependent performance in a short period InAs/GaSb pin SL photodiode within the MWIR domain has been investigated [6] to identify dominant dark current components. Minority carrier lifetimes were observed in the range between 5 and 100 ns.…”

Section: Introductionmentioning

confidence: 99%

Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

Tansel

Hoştut

Elagöz

et al. 2016

Superlattices and Microstructures

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a b s t r a c tTemperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AlSb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors.

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Temperature dependence performances of InAs/GaSb superlattice photodiode

Cited by 19 publications

References 19 publications

Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes

Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

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