Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes

Wróbel, Jarosław; Martyniuk, Piotr; Rogalski, Antoni

doi:10.1155/2012/926365

Cited by 2 publications

(2 citation statements)

References 19 publications

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“…[121] In addition, SRH lifetime in "Ga free" SL has been measured to be much longer compared to InAs/GaSb T2SL. [119,122] To reduce the dark current, [123,124] relevant current mechanisms in T2SL detectors should be understood, which include [113,125] Auger processes, SRH generationrecombination processes, the band-to-band tunneling leakage, trap-assisted tunneling and surface leakage. materials.…”

Section: Type II Strained Layer Superlattice Infrared Detectorsmentioning

confidence: 99%

Heterojunction and superlattice detectors for infrared to ultraviolet

Perera

2016

Progress in Quantum Electronics

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The interest in Infrared and Ultraviolet detectors has increased immensely due to the emergence of important applications over a wide range of activities. Detectors based on free carrier absorption known as Hetero-junction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors and variations of these heterojunction structures to be used as intervalence band detectors for a wide wavelength region are presented. Although this internal photoemission concept is valid for all semiconductor materials systems, using a well studied III-V system of GaAs/Al x Ga 1−x As to cover a wide wavelength range from UV to far-infrared (THz) is an important development in detector technology. Using the intervalence band (heavy hole, light hole and split off) transitions for high operating temperature detection of mid Infrared radiation is also discussed. A promising new way to extend the detection wavelength threshold beyond the standard threshold connected with the energy gap in a GaAs/Al x Ga 1−x As system is also presented. Superlattice detector technology, which is another promising detector architecture, can be optimized using both Type I and Type II heterostructures. Here the focus will be on Type II Strained Layer (T2SL) Superlattice detectors. T2SL Superlattices based on InAs/(In,GA)Sb have made significant improvements demonstrating focal plane arrays operating around 80K and with multiple band detection capability. A novel spectroscopic method to evaluate the band offsets of both heterojunction and superlattice detectors is also discussed.

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Section: Type II Strained Layer Superlattice Infrared Detectorsmentioning

confidence: 99%

Heterojunction and superlattice detectors for infrared to ultraviolet

Perera

2016

Progress in Quantum Electronics

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“…It is also worthy mentioning here that assuming R series = 0 might cause serious over-or underestimation of some fitting parameters under the HOT regime. (21) One of the clearly visible effects connected to this problem is related to the deformation of R shunt . This plot should be symmetric if R series would be much lower than R device .…”

Section: Modelling Of Current-voltage Characteristicsmentioning

confidence: 99%

Analysis of Temperature Dependence of Dark Current Mechanisms in Mid-Wavelength Infrared pin Type-II Superlattice Photodiodes

2014

Sensors and Materials

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We report on the temperature dependence characteristics of mid-wavelength InAs/ GaSb type-II superlattice photodiodes in a temperature range from 120 to 240 K. The bulk material model with an effective bandgap of superlattice material has been used in the modelling of the experimental data. Temperature and bias-dependent differential resistances have been analyzed in detail owing to the contributing mechanisms that limit the electrical performance of the diodes. The C1-HH1 reduced mass has been estimated from the fitting to the high reverse bias (<-1.0 V) voltage and given as about 0.015 m 0 in nearly the entire considered temperature range. This value agrees well with much more complex simulations and cyclotron resonance measurements. Obtaining very good results was possible, thanks to the inclusion of series resistance into the calculations. In this paper, we show how to overcome difficulties with the nonlinear problem related to it.

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Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes

Cited by 2 publications

References 19 publications

Heterojunction and superlattice detectors for infrared to ultraviolet

Heterojunction and superlattice detectors for infrared to ultraviolet

Analysis of Temperature Dependence of Dark Current Mechanisms in Mid-Wavelength Infrared pin Type-II Superlattice Photodiodes

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