Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

Tansel, Tunay; Hoştut, Mustafa; Elagöz, S.; Kılıç, Ali Yavuz; Ergün, Y.; Aydınlı, Atilla

doi:10.1016/j.spmi.2015.12.034

Cited by 13 publications

(5 citation statements)

References 17 publications

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“…Figure 5 shows the current-voltage curves of the ICIP-2 at different temperatures. The dark current density at −0.05 V is as low as 1 × 10 −9 A cm −2 at 80 K, 11 × 10 −3 A cm −2 at 150 K, which is comparable to the state-of-the-art PIN superlattice photodetectors with a similar cutoff wavelength [25][26][27]. One can observe a quick increase of dark current density with the bias from 0 to −0.25 V at 80 K. As the temperature increases above 100 K, the dark current densities change little with negative bias indicating that the diffusion dark current dominates.…”

Section: E E I I E Lmentioning

confidence: 55%

High quantum efficiency mid-wavelength interband cascade infrared photodetectors with one and two stages

Zhou¹,

Chen²,

Xu³

et al. 2016

Semicond. Sci. Technol.

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In this paper, we report on mid-wavelength infrared interband cascade photodetectors grown on InAs substrates. We studied the transport properties of the photon-generated carriers in the interband cascade structures by comparing two different detectors, a single stage detector and a twostage cascade detector. The two-stage device showed quantum efficiency around 19.8% at room temperature, and clear optical response was measured even at a temperature of 323 K. The two detectors showed similar Johnson-noise limited detectivity. The peak detectivity of the one-and two-stage devices was measured to be 2.15 × 10 14 cm•Hz 1/02 /W and 2.19 × 10 14 cm•Hz 1/02 /W at 80 K, 1.21 × 10 9 cm•Hz 1/02 /W and 1.23 × 10 9 cm•Hz 1/02 /W at 300 K, respectively. The 300 K background limited infrared performance (BLIP) operation temperature is estimated to be over 140 K.

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Section: E E I I E Lmentioning

confidence: 55%

High quantum efficiency mid-wavelength interband cascade infrared photodetectors with one and two stages

Zhou¹,

Chen²,

Xu³

et al. 2016

Semicond. Sci. Technol.

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“…where QE , N QE DR and QE P are constituents of quantum efficiencies from n, depletion region and p regions, respectively. [19], x , n x p and x DR are the thickness of n, p and depletion regions as calculated in our previous studies [14,20]). The device parameters used in the calculations are listed in table 1.…”

Section: Methodsmentioning

confidence: 99%

The investigation of quantum efficiency constituents of InAs/AlSb/GaSb based N structure type-II SL photodetectors with InAlAs interface

Kılıç

Tansel

Hoştut

et al. 2018

Semicond. Sci. Technol.

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We report on the optical properties of InAs/AlSb/GaSb based Type-II superlattice N-structure with p on n configuration. The detector structure is designed to operate in the mid wavelength infrared range with 50% cut-off wavelength of 4.88 μm at 79 K. Electronic properties of N-structure such as heavy hole-light hole splitting energies are optimized by a first principles approach taking into account InAlAs interface bonding between InAs/AlSb layers. A responsivity of 1.13 A/W at 3.2 μm was measured under zero bias, with a corresponding quantum efficiency of 44%. An analytical model was developed in order to identify the contribution of quantum efficiency (QE) constituents. The overall QE contains a 56% contribution from the quasi-neutral p-region, 36% from the quasi-neutral n-region and 8% from the depletion region.

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“…Since then, various T2SL barrier designs have been extensively developed including nBn, [129,148,168,172,183,191,192] pBn, [146,162] nBp, [87,171,193] pMp, [154,194] niBin, [195] niBn, [164,165] pBiBn, [169,170] and complementary barrier infrared detector (CBIRD). [166,196] Other novel barrier structures include M-structure [176,197,198] (implemented to suppress the tunneling current which leads to an increase in the doping concentration of the active region, and suppression of diffusion current), W-structure [199] (incorporated to suppress tunneling and G-R currents), and N-structure [200][201][202] (employed to improve the wavefunction overlap of spatially separated electrons and holes leading to enhancement in QE). The fundamental principle behind the incorporation of these barrier layers is the confinement of the electric field zone to the wide bandgap barrier material instead of the absorber region so that the SRH process occurs in the barrier and not in the absorber region.…”

Section: Dark Current Densitymentioning

confidence: 99%

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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Electrical performance of InAs/AlSb/GaSb superlattice photodetectors

Cited by 13 publications

References 17 publications

High quantum efficiency mid-wavelength interband cascade infrared photodetectors with one and two stages

High quantum efficiency mid-wavelength interband cascade infrared photodetectors with one and two stages

The investigation of quantum efficiency constituents of InAs/AlSb/GaSb based N structure type-II SL photodetectors with InAlAs interface

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

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