Light-modulated
transparent memristors combining photoresponse
and data storage are promising as multifunctional devices. Herein,
a multicolor light-modulated transparent memristor based on black
phosphorous (BP) is designed, fabricated, and investigated. BP is
a class of emerging two-dimensional (2D) materials with a natural
direct band gap and a broad light absorption. Herein, BP nanosheets
(BP@PS NSs) coated with polystyrene (PS) are prepared and serve as
the resistive switching (RS) layer in the ITO/BP@PS/ITO memristor,
which shows >75% transmittance between 350 and 1100 nm. With the
aid
of PS, the BP@PS-based memristor has excellent RS characteristics
such as no initial preforming, low operating voltage, and long retention
time. According to the energy band model, the RS mechanism of the
high and low resistance states contributes to the transformation from
ohmic contact to Schottky contact. During light illumination ranging
from ultraviolet (380 nm) to near infrared (785 nm), the Schottky
barrier height is elevated further so that the resetting voltages
and power consumption decrease. Moreover, the ON/OFF ratios are improved
and the maximum enhancement is demonstrated to be more than 10 times.
BP is a promising RS material in light-modulated memristors, and the
novel device configuration provides insights into the development
of multifunctional microelectronic devices based on 2D materials.
Two-dimensional (2D) infrared photodetectors always suffer from low quantum efficiency (QE) because of the limited atomically thin absorption. Here, we reported 2D black phosphorus (BP)/Bi
2
O
2
Se van der Waals (vdW) photodetectors with momentum-matching and band-alignment heterostructures to achieve high QE. The QE was largely improved by optimizing the generation, suppressing the recombination, and improving the collection of photocarriers. Note that momentum-matching BP/Bi
2
O
2
Se heterostructures in
k
-space lead to the highly efficient generation and transition of photocarriers. The recombination process can be largely suppressed by lattice mismatching–immune vdW interfaces. Furthermore, type II BP/Bi
2
O
2
Se vdW heterostructures could also assist fast transport and collection of photocarriers. By constructing momentum-matching and band-alignment heterostructures, a record-high QE of 84% at 1.3 micrometers and 76.5% at 2 micrometers have been achieved in BP/Bi
2
O
2
Se vdW photodetectors.
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