Black Phosphorus Based Multicolor Light-Modulated Transparent Memristor with Enhanced Resistive Switching Performance

Abstract

Light-modulated transparent memristors combining photoresponse and data storage are promising as multifunctional devices. Herein, a multicolor light-modulated transparent memristor based on black phosphorous (BP) is designed, fabricated, and investigated. BP is a class of emerging two-dimensional (2D) materials with a natural direct band gap and a broad light absorption. Herein, BP nanosheets (BP@PS NSs) coated with polystyrene (PS) are prepared and serve as the resistive switching (RS) layer in the ITO/BP@PS/ITO memristor, which shows >75% transmittance between 350 and 1100 nm. With the aid of PS, the BP@PS-based memristor has excellent RS characteristics such as no initial preforming, low operating voltage, and long retention time. According to the energy band model, the RS mechanism of the high and low resistance states contributes to the transformation from ohmic contact to Schottky contact. During light illumination ranging from ultraviolet (380 nm) to near infrared (785 nm), the Schottky barrier height is elevated further so that the resetting voltages and power consumption decrease. Moreover, the ON/OFF ratios are improved and the maximum enhancement is demonstrated to be more than 10 times. BP is a promising RS material in light-modulated memristors, and the novel device configuration provides insights into the development of multifunctional microelectronic devices based on 2D materials.

Memory Devices for Flexible and Neuromorphic Device Applications

“…These include graphene, boron nitride (BN), transition metal dichalcogenides (MoS 2 and WS 2 ), and black phosphorus (BP). [45,46,[85][86][87][88] They have been widely used in various electronic devices, such as transistors, memories, batteries, and photovoltaics. [89][90][91][92] Moreover, they are expected to be one of the materials that can replace the conventional Si-based semiconductors due to their lower power consumption and high-efficiency characteristics.…”

“…e,f ) Reproduced with permission. [46] Copyright 2020, American Chemical Society. characteristics, and showed an ON/OFF current ratio of 10 3 at À1 V. (Figure 1d).…”

“…Layered BP, an emerging 2D material, has attracted attention for electronic devices owing to its high mobility, moderate bandgap, and anisotropic characteristics. [46,138,[155][156][157] At the surface of the multilayer BP, the phosphorus oxide is formed in the air. [138,156] Because of the phosphorus oxide at the BP layers, the multilayer BP has the heterostructure between BP and phosphorus oxide.…”

“…To form the electrical contact between the BP and electrodes, Au/Cr was deposited as the source and drain electrodes. [46,155] The current of the BP channel decreased sharply when a positive pulse was applied at the gate due to the injection of electrons from the channel into the oxide layer. Because the BP showed different electrical characteristics depending on the orientation of the crystal, the device exhibited significantly different characteristics depending on the direction of the electrodes.…”

“…Various materials, such as 2D, electrochemical, and perovskite materials, have emerged as next-generation memory devices. [42][43][44][45][46][47][48] These materials have potential applications in high-performance memory devices as well as in advanced memory devices such as flexible and neuromorphic devices. [49,50] For practical applications, flexible electronics need to be realized on various nonrigid substrates while ensuring sufficient memory performance.…”